Abstract

Due to relentless down scaling of device geometries, failure analysis is getting more and more complex. As a matter of fact, the success rate of Thermal Laser Stimulation (TLS) techniques drops significantly for 90/65 nm CMOS devices because of the lack of x, y and z accuracy. In our aim to improve the TLS based fault isolation method, we have studied thermal time-constant signatures using a Modulated Optical Beam Induced Resistance Change (MOBIRCH) technique that may provide accurate x and y submicron resolution as well as depth or z-information of defects in the interconnection part of devices. Both Modeling and measurement results indicate that OBIRCH signal phase shifts and heat-up & cool-down time constants indeed do correlate with the location, dimensions and density of the structures studied.

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