Abstract

Scanning capacitance microscopy (SCM) is an SPM technique which measures capacitance variation between tip and sample generated by applied AC bias while the tip is scanning in contact mode. Focused ion beam (FIB) milling is the more precise method to perform cross-sectioning of a specific site. The surface amorphization and charge trap layers formed during FIB machining affect the SCM dC/dV signal. This article demonstrates that micro-cleaving and FIB milling are capable of preparing a cross-sectional sample for 2D doping profiling of a specific site for SCM observation. Using the Micro-cleaving technique, a cross-sectional sample can be prepared easily with higher accuracy and shorter time than using a polishing method. However, Micro-cleaving can't be used by itself in the case of cross-sectioning a pattern formed by front end processing of sub-micron patterns. The FIB technique can assist the Micro-cleaving technique in cleaving of front end patterns.

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