Abstract

In this paper, the application of pulsed-TIVA for the localization of Cu/low-k interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA.

copper interconnects, failure analysis, low-k dielectrics, pulsed lasers, pulsed thermally induced voltage alteration, reliability analysis
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Copyright © 2007 ASM International. All rights reserved.
2007
ASM International
Topics
Semiconductor wafer fabrication Reliability analysis Copper
Issue Section:
Poster Session
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