Abstract

SEM analysis of 193-nm photoresist profiles after cross section is seen to be critical because of the shrinkage of the photoresist material during electron beam exposure. With a combination of AFM and SEM investigations on AuPd sputter prepared samples an averaged shrinkage behaviour of height and width of resist lines of varying geometry can be quantitatively determined. This helps to a more accurate determination of resist line profiles.

This content is only available as a PDF.
You do not currently have access to this content.