In this paper, the deformation mechanism of low K dielectric film under electron beams (E-beams) is discussed, and the effect of film deformation on the development of a low K dielectric film etching recipe is investigated. To provide meaningful data for process development, numerical analysis was used in the failure analysis procedure. A correction factor is formulated to calculate the change in thickness of the low K dielectric film after E-beam exposure. In addition, scanning electron microscope (SEM) settings for imaging low K dielectric films are optimized to minimize deformation.

This content is only available as a PDF.
You do not currently have access to this content.