Abstract

In this paper, the deformation mechanism of low K dielectric film under electron beams (E-beams) is discussed, and the effect of film deformation on the development of a low K dielectric film etching recipe is investigated. To provide meaningful data for process development, numerical analysis was used in the failure analysis procedure. A correction factor is formulated to calculate the change in thickness of the low K dielectric film after E-beam exposure. In addition, scanning electron microscope (SEM) settings for imaging low K dielectric films are optimized to minimize deformation.

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