In the field of failure analysis, electrical failures caused by improper implantation are often difficult to debug especially for fully processed products. Familiar implantation failure issues include improper implantation concentration, error doping types, incorrect doping ranges, and etc. Although some FA equipments, such as secondary ion mass spectrometry (SIMS), spreading resistance probe (SRP) and scanning capacitance microscope (SCM) [1] [2] [3], can do detail or quantitative analysis for these failure issues, most of these FA jobs are time-consuming and have a detection limitation at the size of failure area. This limitation may restrict the FA applications because the failure area is usually small at the fully processed products after fault isolation. In this paper, two examples with improper doping type and concentration will be analyzed by using a newly developed FA method. Instead of using traditional cross-section (X-S) stain method, we utilize a plane-view stain method to compare the doping type and doping concentration between normal and failed regions. With the aid of the plane-view stain method, we can have a quick check at the suspected failure area with improper front-end implantation before specific SCM analysis.

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