Abstract

The capabilities of analytical transmission electron microscopy (TEM), such as high spatial resolution, micro-chemical analysis, etc., have led to an increasingly essential role for TEM-based analysis in process development, defect identification, yield enhancement, and root-cause failure analysis with the dynamic random access memory (DRAM) industry. In this article, several examples are reported to carry out the applications of TEM and secondary ion mass spectrometry on crystal defect analysis and electronic characteristics of advanced 512 Mb DRAMs.

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