One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]

diodes, leakage current, root cause analysis, scanning magnetic microscopy, SQUID, time-of-flight secondary ion mass spectrometry
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Copyright © 2006 ASM International. All rights reserved.
2006
ASM International
Topics
Microscopy Semiconductor wafer fabrication Root cause analysis Time-of-flight secondary ion mass spectrometry
Issue Section:
Discrete Devices
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