Abstract
We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.
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Copyright © 2006 ASM International. All rights reserved.
2006
ASM International
Issue Section:
Advanced Techniques
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