Near-field Scanning Microwave Probe for Rapid Detection of Nonvisual and Parametric Defects in Cu/low-k Interconnect on Production Wafers

We demonstrate the use of a near-field scanned microwave probe (NSMP) for failure analysis (FA) of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements.