OBIRCH analysis is a useful technique for defect localization not only for parametric failures, but also for functional analysis. However, OBIRCH results do not always identify the exact defect location. OBIRCH analysis results must be used in conjunction with other analysis tools and techniques to successfully identify defect locations.

defect localization, failure analysis, optical beam induced resistance change
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Copyright © 2005 ASM International. All rights reserved.
2005
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Case Histories
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