Strained silicon induced by the CMOS device process has been considered an important technology for improving the performance of MOSFETs by increasing local carrier mobility in the current channel. In order to evaluate the feasibility of using convergent beam electron diffraction (CBED) in lattice strain determination, high-order Laue zone (HOLZ) lines inside the center disc of a CBED pattern with specific zone axes were kinematically simulated. The intersecting HOLZ lines shift was plotted against the lattice parameter for the determination of uniaxial strain.

CMOS device process, convergent beam electron diffraction, high-order Laue zone, lattice strain determination, MOSFETs, strained silicon
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Copyright © 2005 ASM International. All rights reserved.
2005
ASM International
Topics
Semiconductor wafer fabrication Test method evaluation Electron diffraction Silicon
Issue Section:
Nanotechnology Analysis
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