We present a new failure analysis technique for dark (optically degraded) vertical-cavity surface-emitting lasers. Measurements of spatially and spectrally resolved light emission under reverse bias provide key information on the failure mechanism.

electroluminescence, emission microscopy, failure analysis, vertical-cavity surface-emitting lasers
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Copyright © 2005 ASM International. All rights reserved.
2005
ASM International
Topics
Photoemission electron microscopy Semiconductor wafer fabrication
Issue Section:
Optoelectronic Devices
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