A standby current failure of the 80nm design-ruled Dynamic Random Access Memory (DRAM) during burn-in stress was investigated. In our case, hot electron induced punch-through (HEIP) of a PMOS transistor was a leakage current source. The bake test is a useful method to identify the mechanism of a standby current failure due to hot carrier degradation.

burn-in stress, dynamic random access memory, hot carrier degradation, hot electron induced punch-through, leakage current, PMOS transistors
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Copyright © 2005 ASM International. All rights reserved.
2005
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
Case Histories
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