SCM Application in Semiconductor Failure Analysis and Possible Solution for Well Inspection of Advanced Nanometer Process

Scanning capacitance microscopy (SCM) is a powerful technique that may readily be applied to semiconductor failure analysis yielding information on problems stemming from doping issues. This paper details the study of a current leakage failure and outlines the use of the SCM technique for shallow trench isolation applications. A two-step sample preparation technique involving firstly, Chemical Mechanical Polishing (CMP) followed by a wet etch, could improve the sample surface planarization allowing SCM inspection of the STI region.