Abstract

Scanning capacitance microscopy (SCM) is a powerful technique that may readily be applied to semiconductor failure analysis yielding information on problems stemming from doping issues. This paper details the study of a current leakage failure and outlines the use of the SCM technique for shallow trench isolation applications. A two-step sample preparation technique involving firstly, Chemical Mechanical Polishing (CMP) followed by a wet etch, could improve the sample surface planarization allowing SCM inspection of the STI region.

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