This paper presents electrostatic discharge (ESD) damage simulation results on good units of the RF monolithic microwave integrated circuit device. Two ESD test models, human body model and machine model, simulators were used to simulate the ESD damage on the good units of the RF MMIC devices in different pin configurations. The paper presents the failure analysis results on the field returned units, the ESD damage simulation results, and the failure analysis results on radio frequency operating life failure units. Based on the simulation results obtained, it was concluded that the ESD wounded devices would exhibit a short failure (catastrophic failure) and a low Id failure (latent failure) after being used in the application or field. It is recommended that the static electricity should be eliminated in the workplace at customer site by grounding the operators, equipment and devices in order to prevent the ESD damage.

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