Abstract

This paper provides failure analysis engineers a simple method for constructing probe pads on failing 0.12um SRAM bit cells using the FEI 820 Focused Ion Beam (FIB) tool. This method allows for the easy location of the failing bit cell, results in good electrical isolation, and only takes a minimal amount of FIB time (2 hours for 6 pads). The method is effective for all technologies 0.12um or greater with a high success rate once the analyst is proficient in its use. Once probe pads have been constructed, it is then relatively easy for an analyst to perform electrical analysis to identify the defect type and location causing the bit cell failure before the physical analysis is performed.

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