IC Specification Improvement Through Direct Passive Component Modification in the FIB

It is shown in this study that it is possible to modify under a controlled way the resistance of a passive component either through the milling of part of the volume of a polysilicon resistor or on the contrary through the deposition of a Pt strap parallely connected to the involved device polysilicon resistor. In the latter case, each modification step being followed by an electrical characterization, the evolution of device VCO phase noise versus equivalent resistor value could be drawn and the optimum value quantified.