A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.

electronic component degradation, focused ion beam, specimen preparation, transmission electron microscopes, vertical cavity surface emitting laser
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Copyright © 2003 ASM International. All rights reserved.
2003
ASM International
Topics
Transmission electron microscopy Semiconductor wafer fabrication
Issue Section:
Optoelectronic Devices
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