Abstract

In this work a procedure is presented to look beneath the surface of a SiO2 film and to study the impact of the SiO2/Si interface morphology on the tunneling current, with high lateral resolution, by use of combined Conductive Atomic Force Microscopy (C-AFM) and Intermittent-Contact AFM (IC-AFM) measurements. Evidence is given that interface structures do have direct influence on the distribution of high current spots in MOS capacitors.

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