In this work a procedure is presented to look beneath the surface of a SiO2 film and to study the impact of the SiO2/Si interface morphology on the tunneling current, with high lateral resolution, by use of combined Conductive Atomic Force Microscopy (C-AFM) and Intermittent-Contact AFM (IC-AFM) measurements. Evidence is given that interface structures do have direct influence on the distribution of high current spots in MOS capacitors.

This content is only available as a PDF.
You do not currently have access to this content.