In this work a procedure is presented to look beneath the surface of a SiO2 film and to study the impact of the SiO2/Si interface morphology on the tunneling current, with high lateral resolution, by use of combined Conductive Atomic Force Microscopy (C-AFM) and Intermittent-Contact AFM (IC-AFM) measurements. Evidence is given that interface structures do have direct influence on the distribution of high current spots in MOS capacitors.

conductive atomic force microscopy, failure analysis, semiconductor devices, silicon, tunneling current
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Copyright © 2003 ASM International. All rights reserved.
2003
ASM International
Topics
Atomic force microscopy Semiconductor wafer fabrication Silicon
Issue Section:
Scanning Probe Microscopy
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