Abstract
As semiconductor device manufacturing technologies move below the 100 nm node constrains on using Focused Ion Beam (FIB) systems to perform circuit edit operations tighten dramatically. Phenomena associated with via milling and deposition processes, considered minor side effects in the past, may become performance-limiting factors. Obstacles, associated with editing deep sub micron technologies beyond 100nm node, which include navigational accuracy, beam placement stability, and small via milling and filling processes, cannot be completely overcome without advances in overall FIB system performance and operation. We present a detailed technical overview of the challenges, associated with silicon microsurgery on devices, manufactured with sub 100 nm process technology and describe recent advancements in FIB technology and techniques which address these areas and allow successful modification of today’s most advanced designs.
