Abstract

A spectroscopic photon emission microscope (SPEM) which is capable of high resolution spectroscopy for a continuous wavelength range between 300 nm to 1700 nm has been developed. Photon emissions were observed at energy levels below silicon bandgap from pn junctions and MOSFET devices at different biases. The experimental results indicate significant emission activity in this range. It was also found that the spectra is closely correlated to the electric fields present in the devices.

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