Abstract
A technique is described which allows the precise measurement of the surface area of the dielectric layer of a DRAM deep trench (DT) capacitor. It uses precision FIB sectioning, and allows determination with arbitrary accuracy. It can be used for measuring random DTs in a region of interest for process monitoring, and can also be used for a single target trench in the case of failure analysis.
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Copyright © 2003 ASM International. All rights reserved.
2003
ASM International
Issue Section:
Metrology and Materials Analysis
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