A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.

CMOS transistors, failure analysis, fault isolation, laser wavelength, optical beams
Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Semiconductor wafer fabrication Wavelength Test method evaluation
Issue Section:
Optical Probing
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