Abstract
A number of backside analysis techniques rely on the successful use of optical beams in performing backside fault isolation. In this paper, the authors have investigated the influence of the 1340 nm and 1064 nm laser wavelength on advanced CMOS transistor performance.
Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Issue Section:
Optical Probing
You do not currently have access to this content.