This paper presents the first single element time resolved emission (TRE) data collected from microprocessors fabricated with 0.13 µm process silicon using tester loop lengths, and in many cases acquisition times, comparable to laser voltage probing. The data presented here demonstrate that TRE tools with highly sensitive single element detectors can be used for practical microprocessor circuit diagnostics with reasonable acquisition times.

failure analysis, microprocessors, semiconductor fabrication, silicon, time resolved emission probing
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Semiconductor wafer fabrication Silicon
Issue Section:
Optical Probing
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