This paper presents the first single element time resolved emission (TRE) data collected from microprocessors fabricated with 0.13 µm process silicon using tester loop lengths, and in many cases acquisition times, comparable to laser voltage probing. The data presented here demonstrate that TRE tools with highly sensitive single element detectors can be used for practical microprocessor circuit diagnostics with reasonable acquisition times.

This content is only available as a PDF.
You do not currently have access to this content.