Abstract
The emission microscopy effectiveness has been proven in detecting a variety of IC process leakage defects over the years. However this technique shows limitation on high resistance backend process defects localization, especially on function failures with frequency dependent but without leakage current. This paper introduces three trigger algorithms to enable precisely and directly defects localization of high resistance interconnects.
This content is only available as a PDF.
Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Issue Section:
Die Level Fault Isolation
You do not currently have access to this content.