Abstract
This paper presents detailed results of scanning SQUID microscopy (SSM) analyses performed on the frontside and backside of both loose and packaged die. Optical and SEM images of localized defects are shown. Comparisons with alternative physical fault isolation (PFI) techniques like liquid crystal (LC), Schlieren thermal mapping (STM), temperature induced voltage alteration (TIVA), and photon emission microscopy (PEM) are included. Finally, limitations with and potential improvements for die level SSM are also discussed.
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Issue Section:
Die Level Fault Isolation
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