Marginal internal leakage in mixed-signal devices at operating mode was isolated using a system evaluation board (SEB) and a highly sensitive infrared detector. Focused ion beam cross-section revealed a thin Ti/TiN metal residue (stringer) over two narrowly spaced metal lines. This is a quick and effective technique in isolating small leaky nets for integrated devices.

failure analysis, focused ion beam, infrared detectors, integrated devices, leakage current, system evaluation board
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Semiconductor wafer fabrication
Issue Section:
System Level Analysis
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