In this paper, we demonstrate different techniques of fault isolation from front-side of 6T-SRAM column failures. We show how to choose proper and suitable methods to solve column failures with a variety of characteristics. The capabilities and physical mechanisms of OBIRCH, photoemission microscope and LCA are reviewed utilizing these SRAM column failures.

failure analysis, fault isolation, life cycle assessment, optical beam induced resistance change, photoemission microscope, static random-access memory
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Semiconductor wafer fabrication Microscopes
Issue Section:
Poster Session
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