Abstract

We have developed a new scanning laser microscopy methodology, Soft Defect Localization (SDL), that directly locates soft defects from the front side and backside of an IC. The method combines localized laser heating with the pass/fail state of a device to successfully localize soft defects. Subtle, thermally sensitive soft defects can be localized by careful selection of the IC voltage, temperature, and operating frequency. Several examples are shown.

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