In order to understand spatial and temperature resolution limits of an infrared microscope used for fault location in semiconductor devices, numerical models and bench methods are correlated and discussed. Results clearly show fault identification capability in the sub-micron realm and “hot-spot” resolution of a few tenths of a degree K.

failure analysis, fault location, infrared microscope, infrared microthermography, integrated circuits, numerical models, semiconductor devices
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Semiconductor wafer fabrication Infrared thermography Microscopes
Issue Section:
Poster Session
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