A 300 keV TEM equipped with an EELS and energy selected imaging (ESI) system has proven to be a necessary and powerful analytical tool for R&D and failure analysis support. The advantages and the efficacy of this advanced elemental mapping technique can be optimized when the TEM is operated correctly. Variants of ESI, elemental mapping, jump-ratio mapping, and pre-edge imaging have been adapted to explore root causes of different type of failures in semiconductor manufacturing.

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