A 300 keV TEM equipped with an EELS and energy selected imaging (ESI) system has proven to be a necessary and powerful analytical tool for R&D and failure analysis support. The advantages and the efficacy of this advanced elemental mapping technique can be optimized when the TEM is operated correctly. Variants of ESI, elemental mapping, jump-ratio mapping, and pre-edge imaging have been adapted to explore root causes of different type of failures in semiconductor manufacturing.

electron energy loss spectroscopy, root cause analysis, semiconductor devices, semiconductor manufacturing, transmission electron microscopy
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Copyright © 2002 ASM International. All rights reserved.
2002
ASM International
Topics
Transmission electron microscopy Semiconductor wafer fabrication Root cause analysis Electron energy loss spectroscopy
Issue Section:
Metrology and Materials Analysis
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