Abstract
In this paper, an IC failure case by EOS is presented. The optical microscopy, SAM, and X-ray were used for the non-destructive analysis. The decapsulation, SEM, FIB were used for the destructive analysis. It was found that IC’s presented in this case were electrically overstressed (EOS), which caused the uncontrollable overheating. The EOS symptoms can be various, such as electromigration, intermetallic compound formation, delamination on die surface, circuit track damages, and wire bonding broken. The latch-up testing and deprocess technique were used to simulate the failures and it was found that the failures in this case was due to latch-up. The results show that failure symptoms of EOS are various and their identifications require different failure analysis techniques and tools.
