Contactless Failure Analysis of Integrated Circuits Via Current Contrast Imaging With Magnetic Force Microscopy

One approach for the measurement of circuit internal currents is the measurement of the magnetic field caused by a current flow through a conducting line. Due to its inherent superior spatial resolution in the topography modus magnetic field measurement techniques based on Scanning Force Microscopy seem to be a good basis for advanced measurement techniques for circuit internal failure analysis. Magnetic field measurement can be done by Magnetic Force Microscopy (MFM) using commercial and reproducible magnetic probes. In this paper the state-of-the-art of current measurement via MFM and a real failure analysis of an actual IC where standard failure analysis techniques failed will be demonstrated.