A systematic approach based on top-down polishing and voltage contrast is reported for DRAM WL-BL leakage analysis. It has the advantage of very low NDF and obtains high quality data for process root cause analysis. It is compared and contrasted with alternative techniques, and future developments are discussed.

dynamic random-access memory, leakage analysis, polishing, root cause analysis, voltage contrast
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Copyright © 2001 ASM International. All rights reserved.
2001
ASM International
Topics
Lapping and polishing Root cause analysis
Issue Section:
Poster Session
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