In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.

mechanical polishing, root cause analysis, sample preparation, scanning electron microcopy, semiconductor devices, transmission electron microscope
This content is only available as a PDF.
Copyright © 2001 ASM International. All rights reserved.
2001
ASM International
Topics
Scanning electron microscopy Lapping and polishing Root cause analysis Transmission electron microscopes
Issue Section:
Poster Session
You do not currently have access to this content.