A new ultra-short pulse laser ablation based backside sample preparation method has been developed. This technique is contact-less, non-thermal, precise, repetitive and adapted to each type of material present in IC packages. Backside preparation examples are presented on a conventional DIL plastic package, on a TSOP plastic package with an oversized silicon die, on a DIL ceramic package and on a CCD device. Feasibility of silicon thinning using laser ablation is also discussed.

ceramic packages, charge-coupled devices, dual in-line packages, IC packages, plastic packages, pulse laser ablation, sample preparation, silicon thinning, thin small outline packages
This content is only available as a PDF.
Copyright © 2000 ASM International. All rights reserved.
2000
ASM International
Topics
Electronic packaging Semiconductor wafer fabrication
Issue Section:
Backside
You do not currently have access to this content.