This paper discusses the challenges involved in testing microprocessors incorporating silicon-on-insulator (SOI) technology and assesses new characterizations tools, such as scanning capacitance microscopy (SCM), focused ion beam (FIB) analysis, and AFM electrical probing, that show promise when used to examine SOI device anomalies and failure modes.

atomic force microscopy, CMOS latching circuits, electron energy loss spectroscopy, failure analysis, focused ion beam microscopy, microprocessors, MOSFETs devices, scanning electron microscopy, silicon on insulator, transmission electron microscopy
This content is only available as a PDF.
Copyright © 2000 ASM International. All rights reserved.
2000
ASM International
Topics
Scanning electron microscopy Transmission electron microscopy Atomic force microscopy Semiconductor wafer fabrication Electron energy loss spectroscopy
Issue Section:
Case Histories
You do not currently have access to this content.