Abstract

The need for failure analysis from the backside of the die has introduced new challenges in device analysis applications. Standard silicon based detectors are no longer as efficient due to the absorption of emission signals by the silicon substrate, which is now in the optical path between the device and the detector. The emergence of infrared detectors has offered a solution since emissions in this regime are not attenuated. This paper will describe a comparison made between a silicon detector and two of the most common IR detector materials.

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