Power bipolar devices with gold metallization experience high failure rates. The failures are characterized as shorts, detected during LSI testing at burn-in. Many of these shorted locations are the same for the failed devices. From a statistical lot analysis, it is found that the short failure rate is higher for devices with thinner interlayer dielectric films. Based upon these results, a new electromigration and electrochemical reaction mixed failure mechanism is proposed for the failure.

dielectric films, electrochemical reaction, electromigration, failure analysis, gold metallization, large-scale integration testing, power bipolar devices
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Copyright © 1999 ASM International. All rights reserved.
1999
ASM International
Topics
Power semiconductor devices Metallization Gold
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