Identification of Subtle Isb Failure Mechanisms

Reliability of low standby current (Isb) CMOS circuits is impacted by extremely small non-fault resistive defects which, without compromising logic functionality or timing specifications, cause Isb currents well in excess of device specifications. A primary cause of high Isb, identified through failure analysis, is due to Crystal Originated Pits (COPs) defects, whereat thin oxide is more prone to electrical breakdown.