This paper describes a new technique for identifying defects on integrated circuit. This technique detects the noise content in light emitted from defect sites. The purpose of this technique is to determine which of many light emission sites represent a defect and which represent normal devices. It reports the first phase of studies to evaluate the feasibility and potential effectiveness of this technique. The feasibility of this technique has been demonstrated by simultaneously monitoring electrical noise and the noise in the light emitted from a gallium arsenide light emission diode (LED) and a bipolar transistor. The paper will present the methodology and apparatus used to detect and analyze the noise in light emission.

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