This paper presents the results of a study on the effects of N2-H2 annealing on Pt/PZT/Pt capacitors. By measuring the electrical properties of test capacitors before and after annealing and comparing the data with composition profiles obtained via secondary ion mass spectrometry (SIMS), the authors found that annealing causes an increase in hydrogen in the PZT layer (accompanied by a reduction in nonvolatile polarization) and a decrease in oxygen in the upper Pt film, which is associated with poor adhesion. The authors also found that oxygen annealing, after N2-H2 annealing, can restore electrical properties as well as adhesion states back to their original levels.

annealing, capacitors, chemical composition, electrical properties, failure analysis, ferroelectric properties, passivation, polarization, random access memory, secondary ion mass spectrometry
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Copyright © 1998 ASM International. All rights reserved.
1998
ASM International
Topics
Capacitors Secondary ion mass spectrometry
Issue Section:
Case Histories
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