Abstract

Bipolar silicon transistors were exposed to Californium (252Cf) radiation and neutron radiation obtained from nuclear facilities. The effect of the radiation on the transistors was measured by recording the transistor's electrical characteristic as a function of radiation fluence. Correlation between Californium (252Cf) -induced and neutron-induced damage and previously published data for proton-induced radiation damage was made. Finally, the effect ofthenna1 annealing on gain recovery was also investigated.

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