Abstract

A commercial Electron-beam measurement set-up has been applied to study triggering and turn-on of NMOS ESD protection transistors. Using this technique turn-on times in the sub halve nanosecond range could be determined for the first time. The measured transient behaviour could be described accurately using SPICE simulations. The measurements have been used to explain the CDM failure mode characteristics of the NMOS protection transistor.

This content is only available as a PDF.
You do not currently have access to this content.