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ISTFA 2023: Conference Proceedings from the 49th International Symposium for Testing and Failure Analysis

AI Applications for Failure Analysis

Dimensionality Reduction and Clustering by Yield Signatures to Identify Candidates for Failure Analysis

James De La Torre; Don Kent; David Pivin; Eric St Pierre

ISTFA 2023; 1-6https://doi.org/10.31399/asm.cp.istfa2023p0001

View Articletitled, Dimensionality Reduction and Clustering by Yield Signatures to Identify Candidates for Failure Analysis

Advances in High-Resolution Non-Destructive Defect Localization Based on Machine Learning Enhanced Signal Processing

Sebastian Brand; Michael Kögel; Christian Grosse; Frank Altmann; Christian Hollerith; Pascal Gounet

ISTFA 2023; 7-15https://doi.org/10.31399/asm.cp.istfa2023p0007

View Articletitled, Advances in High-Resolution Non-Destructive Defect Localization Based on Machine Learning Enhanced Signal Processing

Multimodal Named Entity Recognition for Semiconductor Failure Analysis

Anna Safont-Andreu; Corinna Grabner; Christian Burmer; Konstantin Schekotihin

ISTFA 2023; 16-22https://doi.org/10.31399/asm.cp.istfa2023p0016

View Articletitled, Multimodal Named Entity Recognition for Semiconductor Failure Analysis

Fully Automated AI Based Crack Detection on Pad-Over-Active-Areas

D. Pfister; F. Felux; C. Hollerith; A. Jansche; M. O. Volman Stern

ISTFA 2023; 23-27https://doi.org/10.31399/asm.cp.istfa2023p0023

View Articletitled, Fully Automated AI Based Crack Detection on Pad-Over-Active-Areas

Boards and Systems

Problems and Methods of Board Level Reliability: Mechanical Shock Testing

Micah R Hernandez

ISTFA 2023; 28-33https://doi.org/10.31399/asm.cp.istfa2023p0028

View Articletitled, Problems and Methods of Board Level Reliability: Mechanical Shock Testing

Evaluation of Inductor for Solderability and Drop Damage Susceptibility

Mack Marshall; Edward Huang; Arun Rajaraman; David Grosjean

ISTFA 2023; 34-40https://doi.org/10.31399/asm.cp.istfa2023p0034

View Articletitled, Evaluation of Inductor for Solderability and Drop Damage Susceptibility

Case Studies and Device Analysis

Laser Voltage Characterization of Transition Delay Failures in Combinatorial Logic

A.A. Merassi; A. Boglio

ISTFA 2023; 41-44https://doi.org/10.31399/asm.cp.istfa2023p0041

View Articletitled, Laser Voltage Characterization of Transition Delay Failures in Combinatorial Logic

Intricacies in the Failure Analysis of Integrated Capacitors

Christopher S. Mahinay; Christian Reyes; Ricardo Calanog; Raymond Mendaros

ISTFA 2023; 45-53https://doi.org/10.31399/asm.cp.istfa2023p0045

View Articletitled, Intricacies in the Failure Analysis of Integrated Capacitors

Electrical Fault Isolation of Stuck at Reset Hard Failures

Amrutha Sampath; Carey Wu; Kristofor Dickson

ISTFA 2023; 54-61https://doi.org/10.31399/asm.cp.istfa2023p0054

View Articletitled, Electrical Fault Isolation of Stuck at Reset Hard Failures

Enhancing Device Margins Using Double-Gate Oxide in Buried-Gate FETs

Youmin Kim

ISTFA 2023; 62-66https://doi.org/10.31399/asm.cp.istfa2023p0062

View Articletitled, Enhancing Device Margins Using Double-Gate Oxide in Buried-Gate FETs

A Comprehensive Failure Analysis Approach Utilizing High-Resolution Targeted Patterns (HRTP) for ATPG Diagnosis Resolution Improvement, Test Coverage Resolution, and Further Fault Localization

R. Estores; E. Barbian; L. Boukhanfra; K. Villareal; A. Sabate

ISTFA 2023; 67-77https://doi.org/10.31399/asm.cp.istfa2023p0067

View Articletitled, A Comprehensive Failure Analysis Approach Utilizing High-Resolution Targeted Patterns (HRTP) for ATPG Diagnosis Resolution Improvement, Test Coverage Resolution, and Further Fault Localization

Process and Workflow Case Studies

Avalon-Aided Mapping of Fault-Localized Area of ADI’s RADAR Receive Path Analog Front-End (AFE) Amplifier with 0.18um 6-Metal CMOS Fab Process

Arnulfo Evangelista; Janella Alfelor-Igtiben; John David Mangali; Khristopherson Cajucom

ISTFA 2023; 78-84https://doi.org/10.31399/asm.cp.istfa2023p0078

View Articletitled, Avalon-Aided Mapping of Fault-Localized Area of ADI’s RADAR Receive Path Analog Front-End (AFE) Amplifier with 0.18um 6-Metal CMOS Fab Process

Failure Localization Technique for Metal and Transistor Defects Through Avalon CAD Navigation and Focused Ion Beam Circuit Edit

Joana Mae De Jesus; Mark Anthony Acedillo

ISTFA 2023; 85-91https://doi.org/10.31399/asm.cp.istfa2023p0085

View Articletitled, Failure Localization Technique for Metal and Transistor Defects Through Avalon CAD Navigation and Focused Ion Beam Circuit Edit

A Multiscale and Multimodal Correlative Microscopy Workflow to Characterize Copper Segregations Identified in Epitaxial Layer of Power MOSFETs

Flavio Cognigni; Marco Rossi; Heiko Stegmann; Giuseppe Sciuto; Giuseppe Anastasi; Massimiliano Astuto; Marco Bonadonna; Domenico Mello

ISTFA 2023; 92-100https://doi.org/10.31399/asm.cp.istfa2023p0092

View Articletitled, A Multiscale and Multimodal Correlative Microscopy Workflow to Characterize Copper Segregations Identified in Epitaxial Layer of Power MOSFETs

Inline Defect Solution to Mitigate EOL Device Failure

Yong Guo; Brian MacDonald; Yanan Guo; Nathan McEwen; Juheon Kim; Christopher Penley

ISTFA 2023; 101-104https://doi.org/10.31399/asm.cp.istfa2023p0101

View Articletitled, Inline Defect Solution to Mitigate EOL Device Failure

Single Bit SRAM Failure Case Study

Yuyan Wang; Albert Gleason; James Fox; Usha Bhimavarapu; Juan Ortiz; Huan Dang

ISTFA 2023; 105-108https://doi.org/10.31399/asm.cp.istfa2023p0105

View Articletitled, Single Bit SRAM Failure Case Study

Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device

M. Simon-Najasek; F. Naumann; S. Huebner; M. Lejoyeux; F. Altmann; A. Lindner

ISTFA 2023; 109-116https://doi.org/10.31399/asm.cp.istfa2023p0109

View Articletitled, Backside Analysis Strategy to Identify a Package Related Failure Mode at an Automotive Magnetic Sensor Device

Implementation of RFID-based Equipment Management System for Failure Analysis Laboratory Equipment

Acer Jay Castillo; Mark Anthony Acedillo

ISTFA 2023; 117-120https://doi.org/10.31399/asm.cp.istfa2023p0117

View Articletitled, Implementation of RFID-based Equipment Management System for Failure Analysis Laboratory Equipment

Working Time Prediction and Workflow Mining at Failure Analysis

Domenico Pagliaro; Martin Pleschberger; Olivia Pfeiler; Thomas Freislich; Konstantin Schekotihin

ISTFA 2023; 121-130https://doi.org/10.31399/asm.cp.istfa2023p0121

View Articletitled, Working Time Prediction and Workflow Mining at Failure Analysis

Detecting and Preventing Counterfeit Microelectronics

Benchmarking ResCav – A Resonant Cavity System Used to Detect Counterfeit Microelectronics

Aditya Nechiyil; Robert Lee; Gregg Chapman; Jamin J. McCue

ISTFA 2023; 131-135https://doi.org/10.31399/asm.cp.istfa2023p0131

View Articletitled, Benchmarking ResCav – A Resonant Cavity System Used to Detect Counterfeit Microelectronics

Exploring the Effect of Annotation Quality on PCB Component Segmentation

Md Mahfuz Al Hasan; Nathan Jessurun; Nitin Varshney; Navid Asadizanjani

ISTFA 2023; 136-144https://doi.org/10.31399/asm.cp.istfa2023p0136

View Articletitled, Exploring the Effect of Annotation Quality on PCB Component Segmentation

Die Level Fault Isolation

Incorporating Time-Domain Reflectometry in Chip-Level Failure Analysis Workflow: Case Studies

Joy Y. Liao; Khanh Giang; Timothy Pham; Howard Lee Marks

ISTFA 2023; 145-150https://doi.org/10.31399/asm.cp.istfa2023p0145

View Articletitled, Incorporating Time-Domain Reflectometry in Chip-Level Failure Analysis Workflow: Case Studies

Photon Emission Intensity Analysis for Leakage Source Identification

Zhigang Song; Franco Stellari; Phong Tran

ISTFA 2023; 151-154https://doi.org/10.31399/asm.cp.istfa2023p0151

View Articletitled, Photon Emission Intensity Analysis for Leakage Source Identification

Methods to Enhance Infrared Imaging for Defect Localization Using Lock-in Thermography

Anjanashree M.R. Sharma; Kristof J.P. Jacobs; Ingrid De Wolf

ISTFA 2023; 155-159https://doi.org/10.31399/asm.cp.istfa2023p0155

View Articletitled, Methods to Enhance Infrared Imaging for Defect Localization Using Lock-in Thermography

Logical to Physical SRAM Bitmap Verification with Fault Localization

Alexander Maggiacomo; Rabindra Pahari; Torsten Schaefer; Gregory Billus; Suresh Shekar; Satish Kodali; Felix Beaudoin; Aaron Sinnott

ISTFA 2023; 160-163https://doi.org/10.31399/asm.cp.istfa2023p0160

View Articletitled, Logical to Physical SRAM Bitmap Verification with Fault Localization

Electrical Event Capture with an Electron Beam Probing System

Neel Leslie; James Vickers; Jennifer J Huening; Xianghong Tom Tong; Patrick Pardy

ISTFA 2023; 164-167https://doi.org/10.31399/asm.cp.istfa2023p0164

View Articletitled, Electrical Event Capture with an Electron Beam Probing System

Emerging FA Techniques and Concepts

On Demand Bit-Level SRAM Validation using CW 785nm Laser-Induced Fault Analysis (LIFA)

Keith A. Serrels; Kris Dickson; Clifford Howard; Jose Garcia; Eric Foote; Gary Clark; Ben Gonzalez; Chinemerem Nwokolo

ISTFA 2023; 168-176https://doi.org/10.31399/asm.cp.istfa2023p0168

View Articletitled, On Demand Bit-Level SRAM Validation using CW 785nm Laser-Induced Fault Analysis (LIFA)

Fault Simulation for Dynamic Failures in Analog and Mixed Signal Circuits

Tommaso Melis

ISTFA 2023; 177-186https://doi.org/10.31399/asm.cp.istfa2023p0177

View Articletitled, Fault Simulation for Dynamic Failures in Analog and Mixed Signal Circuits

Poster Session

A Failure Caused by Extended Cross-Defect in DRAM

Jaehoon Lee; Jinseon Kim; Dongguk Han; Seunghun Lee; Sunwoo Kim; Jingyeong Seol; Seungjin Lee; Kyoungrak Cho; Incheol Nam; Daesun Kim; Beomseop Lee; Heeil Hong; Sangjun Hwang

ISTFA 2023; 187-189https://doi.org/10.31399/asm.cp.istfa2023p0187

View Articletitled, A Failure Caused by Extended Cross-Defect in DRAM

Effective Fault Localization Approach for High Speed Transceiver Failure: From Non-destructive to Destructive

Kuan Lai Khei; Liew Chiun Ning; Goh Lay Lay; Wu Jia Jun; Sailesh Suthar

ISTFA 2023; 190-193https://doi.org/10.31399/asm.cp.istfa2023p0190

View Articletitled, Effective Fault Localization Approach for High Speed Transceiver Failure: From Non-destructive to Destructive

In-Situ TEM Observation of Tungsten Migration at Elevated Temperatures

Jisung Cheon; Yangsun Park; Minsik Kim; Hyerim Yoo; Eunyeong Oh; Sungho Lee

ISTFA 2023; 194-196https://doi.org/10.31399/asm.cp.istfa2023p0194

View Articletitled, In-Situ TEM Observation of Tungsten Migration at Elevated Temperatures

Electron Beam Induced Resistance Change for Isolation of Wordline Shorts in 3D Replacement Gate NAND

Chandler Rich; Wayne Harlow; Becky Muñoz; Regino Sandoval; J. Temo Davis; Scott Williams

ISTFA 2023; 197-200https://doi.org/10.31399/asm.cp.istfa2023p0197

View Articletitled, Electron Beam Induced Resistance Change for Isolation of Wordline Shorts in 3D Replacement Gate NAND

Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis

Robert Scott; Tim Schnutenhaus; Andres Torres; Nathan McEwen; Kah Chin Cheong; Christopher Penley

ISTFA 2023; 201-204https://doi.org/10.31399/asm.cp.istfa2023p0201

View Articletitled, Application of Beam Deceleration to Improve SEM Image Quality for Physical Failure Analysis

In-Situ Global Ultra Thinning of Live Chip Backside for Digital Forensic and Failure Analysis

Kees Schot; Aya Fukami

ISTFA 2023; 205-208https://doi.org/10.31399/asm.cp.istfa2023p0205

View Articletitled, In-Situ Global Ultra Thinning of Live Chip Backside for Digital Forensic and Failure Analysis

The Sulfide Contamination Management in Circuit Probing FAB Clean Room Environment

Kuan-Jui Tu; Frank Su; Wen-Fei Hsieh; Vincent Chen; Henry Lin; Y.S. Lou

ISTFA 2023; 209-213https://doi.org/10.31399/asm.cp.istfa2023p0209

View Articletitled, The Sulfide Contamination Management in Circuit Probing FAB Clean Room Environment

ICCDLAB : Silicon Chip Tooling for Failure Analysis Laboratories

Nicolas Lysee; Thierry Parrassin; Céline Le Gloanec; Bertrand Borot; Sylvain Dudit

ISTFA 2023; 214-219https://doi.org/10.31399/asm.cp.istfa2023p0214

View Articletitled, ICCDLAB : Silicon Chip Tooling for Failure Analysis Laboratories

Spatial Resolution Enhancement of Time-Resolved Photon Emission Imaging with Superconducting Nanowire Single Photon Detector

Norimichi Chinone; Hirotoshi Terada; Tomonori Nakamura; Yoshiyuki Yokoyama; Toru Matsumoto

ISTFA 2023; 220-223https://doi.org/10.31399/asm.cp.istfa2023p0220

View Articletitled, Spatial Resolution Enhancement of Time-Resolved Photon Emission Imaging with Superconducting Nanowire Single Photon Detector

Large Area Imaging for Metrology with High Accuracy Using Scanning Electron Microscope

Kyungbin Kim; Eugene Kim; Innyeong Choi; Woo Jun Kwon; Christopher H. Kang

ISTFA 2023; 224-227https://doi.org/10.31399/asm.cp.istfa2023p0224

View Articletitled, Large Area Imaging for Metrology with High Accuracy Using Scanning Electron Microscope

Advanced Axis Correction for Automated Workflow of Vertical Scanning Electron Microscopy Applications

Jooeun Lee; Woo Jun Kwon; In Chang Choi; Christopher H. Kang

ISTFA 2023; 228-232https://doi.org/10.31399/asm.cp.istfa2023p0228

View Articletitled, Advanced Axis Correction for Automated Workflow of Vertical Scanning Electron Microscopy Applications

The Influence of Temperature on Photoresist Profiles during TEM Sample Preparation using Cryo-FIB

Ji Hye Hyun; Youngjin Cho; Hyoungsic Cho; Seojin Kim; In Chang Choi; Beomjun Kim; Yoonhae Kim; Christopher H. Kang

ISTFA 2023; 233-237https://doi.org/10.31399/asm.cp.istfa2023p0233

View Articletitled, The Influence of Temperature on Photoresist Profiles during TEM Sample Preparation using Cryo-FIB

Open Localization with LIT

Marc van Veenhuizen; Jinbo Wan; Shuhan Yang; Lei Peters-Wu

ISTFA 2023; 238-242https://doi.org/10.31399/asm.cp.istfa2023p0238

View Articletitled, Open Localization with LIT

Fractographic Case Studies of Thinning Related Fracture-Patterns in Silicon Chips

Josef Maynollo

ISTFA 2023; 243-245https://doi.org/10.31399/asm.cp.istfa2023p0243

View Articletitled, Fractographic Case Studies of Thinning Related Fracture-Patterns in Silicon Chips

Inverter Characterization in Advanced Process by Nanoprobing

J.S. Tsai; C.H. Yen; D.Y. Tzou; K.T. Ho

ISTFA 2023; 246-248https://doi.org/10.31399/asm.cp.istfa2023p0246

View Articletitled, Inverter Characterization in Advanced Process by Nanoprobing

Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures

Ricky Anthony; Jer O’Sullivan

ISTFA 2023; 249-252https://doi.org/10.31399/asm.cp.istfa2023p0249

View Articletitled, Magneto-Optic Kerr Imaging Technique for Localizing Magnetic Failures

Automated Algorithm of Die Filter for PFA Sampling

Yougui Liao; Marsela Pontoh; Tyler Lenzi

ISTFA 2023; 253-256https://doi.org/10.31399/asm.cp.istfa2023p0253

View Articletitled, Automated Algorithm of Die Filter for PFA Sampling

Femtosecond Laser Tool for Characterization of Advanced Packages

I.G.C. Weppelman; S.T. Coyle

ISTFA 2023; 257-264https://doi.org/10.31399/asm.cp.istfa2023p0257

View Articletitled, Femtosecond Laser Tool for Characterization of Advanced Packages

Reliable Backside IC Preparation Down to STI Level Using Chemical Mechanical Polishing (CMP) with Highly Selective Slurry

Norbert Herfurth; Awwal A. Adesunkanmi; Gerfried Zwicker; Christian Boit

ISTFA 2023; 265-270https://doi.org/10.31399/asm.cp.istfa2023p0265

View Articletitled, Reliable Backside IC Preparation Down to STI Level Using Chemical Mechanical Polishing (CMP) with Highly Selective Slurry

GEM-Water: Generation of EM-based Watermark for SoC IP Validation with Hidden FSMs

Pantha Protim Sarker; Upoma Das; Mohammad Bin Monjil; Hadi Mardani Kamali; Farimah Farahmandi; Mark Tehranipoor

ISTFA 2023; 271-278https://doi.org/10.31399/asm.cp.istfa2023p0271

View Articletitled, GEM-Water: Generation of EM-based Watermark for SoC IP Validation with Hidden FSMs

Proposal of Tilt-Axis Adjustment in V-NAND Plan-View without Si Substrate Using Automated Metrology of Transmission Electron Microscope

Dong-yeob Kim; Su-yeon Kim; Woo-jun Kwon; Min-kook Kim; Christopher H. Kang

ISTFA 2023; 279-281https://doi.org/10.31399/asm.cp.istfa2023p0279

View Articletitled, Proposal of Tilt-Axis Adjustment in V-NAND Plan-View without Si Substrate Using Automated Metrology of Transmission Electron Microscope

Autoencoder-Based Defect Detection is Applied to CAFM Images of Periodical Structures

Alexey Solovey; Chuan Zhang

ISTFA 2023; 282-284https://doi.org/10.31399/asm.cp.istfa2023p0282

View Articletitled, Autoencoder-Based Defect Detection is Applied to CAFM Images of Periodical Structures

High-Precision Pulse Reflectometry-Based Fault Localization Approach for Advanced Chip Package Failures

Chuan Zhang; John Aguada

ISTFA 2023; 285-290https://doi.org/10.31399/asm.cp.istfa2023p0285

View Articletitled, High-Precision Pulse Reflectometry-Based Fault Localization Approach for Advanced Chip Package Failures

Voltage Free Failure Analysis of Sub-15nm DRAM Gate Insulator Breakdown based on Thermal Laser Stimulation

Chae Soo Kim; Bohyeon Jeon; Chiheon Byeon; Seungchul Yew; Dong In Lee; SeGuen Park; Hyodong Ban

ISTFA 2023; 291-294https://doi.org/10.31399/asm.cp.istfa2023p0291

View Articletitled, Voltage Free Failure Analysis of Sub-15nm DRAM Gate Insulator Breakdown based on Thermal Laser Stimulation

FIB Circuit Analysis and Edit

Defect Isolation in Advanced Nodes Large Circuitry Structures using a Combination of FIB Circuit Edits and Passive Voltage Contrast

Michael Allen Rodder; Gina Cha; Gil Tovar; Kah Chin Cheong; Christopher Penley

ISTFA 2023; 295-299https://doi.org/10.31399/asm.cp.istfa2023p0295

View Articletitled, Defect Isolation in Advanced Nodes Large Circuitry Structures using a Combination of FIB Circuit Edits and Passive Voltage Contrast

Low-kV FIB Applications and Workflows for Advanced Circuit Edit

Rongjin Yan; Majid Vaghayenegar; David Donnet; Alex Buxbaum

ISTFA 2023; 300-304https://doi.org/10.31399/asm.cp.istfa2023p0300

View Articletitled, Low-kV FIB Applications and Workflows for Advanced Circuit Edit

FIB Sample Preparation

In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices

Dionaldo Zudhistira; Ho Mun-Yee; Vinod Narang

ISTFA 2023; 305-308https://doi.org/10.31399/asm.cp.istfa2023p0305

View Articletitled, In-Situ Orthogonal TEM Lamella Conversion for Catching Subtle Defects in 3D Transistors of Microprocessor Devices

Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB

C.S. Bonifacio; M.L. Ray; P.E. Fischione; Y. Yu; M. Skowronski

ISTFA 2023; 309-316https://doi.org/10.31399/asm.cp.istfa2023p0309

View Articletitled, Precise Final Thinning by Concentrated Ar Ion Beam Milling of Plan View TEM Specimens from Phase Change Memory Device Prepared in Xe Plasma FIB

Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples

Jacob Levenson; Swaminathan Subramanian; Khiem Ly; Tony Chrastecky

ISTFA 2023; 317-322https://doi.org/10.31399/asm.cp.istfa2023p0317

View Articletitled, Techniques for Preparation of Damage-Free Ultrathin Cross-Section TEM Samples from Planar TEM Samples

Hardware Attacks, Security, and Reverse Engineering

Antenna-in-Package Assurance with Radio Frequency Fingerprint

Rouhan Noor; Liton Kumar Biswas; M. Shafkat; M. Khan; Yong-Kyu Yoon; Navid Asadizanjani

ISTFA 2023; 323-328https://doi.org/10.31399/asm.cp.istfa2023p0323

View Articletitled, Antenna-in-Package Assurance with Radio Frequency Fingerprint

Layout-Only Hardware Trojans: Attack Vectors and a Non-Golden Model Reverse Engineering-Based Counterstrategy

Matthias Ludwig; Ann-Christin Bette; Bernhard Lippmann

ISTFA 2023; 329-338https://doi.org/10.31399/asm.cp.istfa2023p0329

View Articletitled, Layout-Only Hardware Trojans: Attack Vectors and a Non-Golden Model Reverse Engineering-Based Counterstrategy

Electrons Vs. Photons: Assessment of Circuit’s Activity Requirements for E-Beam and Optical Probing Attacks

Elham Amini; Tuba Kiyan; Lars Renkes; Thilo Krachenfels; Christian Boit; Jean-Pierre Seifert; Jörg Jatzkowski; Frank Altmann; Sebastian Brand; Shahin Tajik

ISTFA 2023; 339-345https://doi.org/10.31399/asm.cp.istfa2023p0339

View Articletitled, Electrons Vs. Photons: Assessment of Circuit’s Activity Requirements for E-Beam and Optical Probing Attacks

Electron Beam Probing: The New Sheriff in Town for Security Analyzing of Sub- 7nm ICs - Exploring the Advantages of a Post-Photon Emission Technique

Nitin Varshney; Chengjie Xi; Aslam A Khan; Liton Kumar Biswas; Volker Sorger; Hamed Dalir; Navid Asadizanjani

ISTFA 2023; 346-351https://doi.org/10.31399/asm.cp.istfa2023p0346

View Articletitled, Electron Beam Probing: The New Sheriff in Town for Security Analyzing of Sub- 7nm ICs - Exploring the Advantages of a Post-Photon Emission Technique

Lock-in Thermography for the Localization of Security Hard Blocks on SoC Devices

Michael Kögel; Sebastian Brand; Christian Große; Frank Altmann; Bodo Selmke; Kilian Zinnecker; Robert Hesselbarth; Nisha Jacob Kabakci

ISTFA 2023; 352-359https://doi.org/10.31399/asm.cp.istfa2023p0352

View Articletitled, Lock-in Thermography for the Localization of Security Hard Blocks on SoC Devices

LLE: Mitigating IC Piracy and Reverse Engineering by Last Level Edit

Sazadur Rahman; Nitin Varshney; Farimah Farahmandi; Navid Asadi Zanjani; Mark Tehranipoor

ISTFA 2023; 360-369https://doi.org/10.31399/asm.cp.istfa2023p0360

View Articletitled, LLE: Mitigating IC Piracy and Reverse Engineering by Last Level Edit

Microscopy Analysis and Materials Characterization

2D and 3D Metrology and Failure Analysis for High Bandwidth Memory Package by Xe and Ar Plasma-FIB

Melissa Mullen; Mark McClendon; Adam Stokes; Xiaoting Gu; Pete Carleson

ISTFA 2023; 370-379https://doi.org/10.31399/asm.cp.istfa2023p0370

View Articletitled, 2D and 3D Metrology and Failure Analysis for High Bandwidth Memory Package by Xe and Ar Plasma-FIB

“Full” Automatic TEM from Imaging to Metrology

Yong Liu; Christopher Earl Carlton; Qi Zhang

ISTFA 2023; 380-383https://doi.org/10.31399/asm.cp.istfa2023p0380

View Articletitled, “Full” Automatic TEM from Imaging to Metrology

Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC

William A Hubbard

ISTFA 2023; 384-386https://doi.org/10.31399/asm.cp.istfa2023p0384

View Articletitled, Mapping Conductivity and Electric Field in an AlGaAs HEMT with STEM EBIC

FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures

Heiko Stegmann; Alexandre Laquerre

ISTFA 2023; 387-392https://doi.org/10.31399/asm.cp.istfa2023p0387

View Articletitled, FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures

Expanding Failure Analysis Using Fluorescence Combined with IR and Raman

Jay Anderson; Michael K. F. Lo; Eoghan P. Dillon; Mustafa Kansiz

ISTFA 2023; 393-398https://doi.org/10.31399/asm.cp.istfa2023p0393

View Articletitled, Expanding Failure Analysis Using Fluorescence Combined with IR and Raman

Complete Compressed Sensing System For Scanning Probe Microscopy

E.L. Principe; K.M. Scammon; B.W. Kempshall; J.J. Hagen

ISTFA 2023; 399-402https://doi.org/10.31399/asm.cp.istfa2023p0399

View Articletitled, Complete Compressed Sensing System For Scanning Probe Microscopy

Nanoprobing and Electrical Characterization II

Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization

Nick Pronin; Stefano Larentis; Carey Wu; Eric Foote; Gary Clark; Khiem Ly; Jacob Levenson; Kristofor Dickson; Charles Petri; Nelson Gomez; Tony Chrastecky

ISTFA 2023; 403-410https://doi.org/10.31399/asm.cp.istfa2023p0403

View Articletitled, Multilayer pFIB Trenches for Multiple Tip EBAC/EBIRCH Analysis and Internal Node Transistor Characterization

Nanoprobing on an MRAM Cell, Following a Backside Opening, to Extract Logical Data

Louise Dumas; Guillaume Bascoul; Christina Villeneuve-Faure; François Marc; Hélène Fremont; Christophe Guerin

ISTFA 2023; 411-419https://doi.org/10.31399/asm.cp.istfa2023p0411

View Articletitled, Nanoprobing on an MRAM Cell, Following a Backside Opening, to Extract Logical Data

Nanoprobing for Logical Cell Operational Tests

Branden Long; Yang Su; Yunfei Wang; Christopher Morgan; Md Faisal Kabir; Ramya Padmanaban; Weston Hearne; Tad Daniel

ISTFA 2023; 420-426https://doi.org/10.31399/asm.cp.istfa2023p0420

View Articletitled, Nanoprobing for Logical Cell Operational Tests

Advances in EFA with Color Coded Multi-Channel Nanoprobing

Grigore Moldovan; William Courbat; Jörg Jatzkowski

ISTFA 2023; 427-431https://doi.org/10.31399/asm.cp.istfa2023p0427

View Articletitled, Advances in EFA with Color Coded Multi-Channel Nanoprobing

Package Level Fault Isolation

Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution

Susan Li; John Frame; Edita Madriaga-Berry; Jose Hulog; Ming Zhang; Masako Terada; Allen Gu; David Taraci

ISTFA 2023; 432-435https://doi.org/10.31399/asm.cp.istfa2023p0432

View Articletitled, Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution

Nondestructive Package Level Fault Isolation of Multichip Power Module

Pui Leng Low

ISTFA 2023; 436-442https://doi.org/10.31399/asm.cp.istfa2023p0436

View Articletitled, Nondestructive Package Level Fault Isolation of Multichip Power Module

An Artificial Intelligence Powered Resolution Recovery Technique and Workflow to Accelerate Package Level Failure Analysis with 3D X-ray Microscopy

Syahirah Mohammad-Zulkifli; Bernice Zee; Qiu Wen; Maverique Ong; Yanjing Yang; Andriy Andreyev; Masako Terada; Allen Gu

ISTFA 2023; 443-447https://doi.org/10.31399/asm.cp.istfa2023p0443

View Articletitled, An Artificial Intelligence Powered Resolution Recovery Technique and Workflow to Accelerate Package Level Failure Analysis with 3D X-ray Microscopy

Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy

Mario Wolf; Bugra Birki; Peter Hoffrogge; Peter Czurratis; Chaitanya Bakre; Mario Pacheco; Deepak Goyal

ISTFA 2023; 448-451https://doi.org/10.31399/asm.cp.istfa2023p0448

View Articletitled, Near-Field Synthetic Aperture Focusing Technique to Enhance the Inspection Capability of Multi-Layer HBM Stacks in Scanning Acoustic Microscopy

Packaging and Assembly

Discoloration: A Case of Mistaken Identity Callout for Reliability Stressed Palladium Coated Copper (PCC) Wires After Mold Compound Removal

Brian Yabut; Rona Balabbo; Mac Masiris

ISTFA 2023; 452-458https://doi.org/10.31399/asm.cp.istfa2023p0452

View Articletitled, Discoloration: A Case of Mistaken Identity Callout for Reliability Stressed Palladium Coated Copper (PCC) Wires After Mold Compound Removal

Finite Element Analysis (FEA) and Fractography : Complementary Methods in Understanding the Factors Resulting to Hairline Die Crack on Chip-On-Lead (COL) Devices

Melanie Cajita; Renald Dechino; Marionne Javien; Nico Deus Villafranca

ISTFA 2023; 459-462https://doi.org/10.31399/asm.cp.istfa2023p0459

View Articletitled, Finite Element Analysis (FEA) and Fractography : Complementary Methods in Understanding the Factors Resulting to Hairline Die Crack on Chip-On-Lead (COL) Devices

Power Devices (Si, SiC, GaN)

GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy

Marc Fouchier; Christian Monachon; Matthew Davies

ISTFA 2023; 463-468https://doi.org/10.31399/asm.cp.istfa2023p0463

View Articletitled, GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy

Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical Characterization

Z. F. Scales; C. Koller; S. Schoemann; M. Nelhiebel; M. Reisinger; J. Jatzkowski; P. Diehle; M. Stoeger-Pollach

ISTFA 2023; 469-477https://doi.org/10.31399/asm.cp.istfa2023p0469

View Articletitled, Identifying Electrically Active Dislocations in GaN and the Challenge of Cross-Correlative Physical Characterization

Combining Three-Dimensional FIB-SEM Imaging and EBIC to Characterize Power Semiconductor Junctions

Heiko Stegmann; Greg Johnson; Andreas Rummel

ISTFA 2023; 478-482https://doi.org/10.31399/asm.cp.istfa2023p0478

View Articletitled, Combining Three-Dimensional FIB-SEM Imaging and EBIC to Characterize Power Semiconductor Junctions

SiC MOSFET Micro-Explosion Due to a Single Event Burnout: Analysis at the Device and Die Levels

Rosine Coq Germanicus; Tanguy Phulpin; Thomas Rogaume; Kimmo Niskanen; Sandrine Froissart; Olivier Latry; Alain Michez; Ulrike Lüders

ISTFA 2023; 483-490https://doi.org/10.31399/asm.cp.istfa2023p0483

View Articletitled, SiC MOSFET Micro-Explosion Due to a Single Event Burnout: Analysis at the Device and Die Levels

Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes

L. Ghizzo; G. Guibaud; C. De Nardi; F. Jamin; V. Chazal; D. Trémouilles; R. Monflier; F. Richardeau; G. Bascoul; M. González

ISTFA 2023; 491-499https://doi.org/10.31399/asm.cp.istfa2023p0491

View Articletitled, Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes

A Correlative Study of Silicon Carbide Power Devices Using Atom Probe Tomography and Transmission Electron Microscopy

Ramya Cuduvally; Bavley Guerguis; Brian Langelier; Nabil D. Bassim; Ramya Cuduvally; Carmen M. Andrei; Travis Casagrande; Gabriel A. Arcuri; Brian Langelier; Nabil D. Bassim; Stephen Russell

ISTFA 2023; 500-508https://doi.org/10.31399/asm.cp.istfa2023p0500

View Articletitled, A Correlative Study of Silicon Carbide Power Devices Using Atom Probe Tomography and Transmission Electron Microscopy

In-Situ Junction Analysis in SiC (and GaN)

Gregory M. Johnson; Heiko Stegmann; Thomas Rodgers; Frank Hitzel; Andreas Rummel; Domenico Mello; Martin Kuball

ISTFA 2023; 509-518https://doi.org/10.31399/asm.cp.istfa2023p0509

View Articletitled, In-Situ Junction Analysis in SiC (and GaN)

A Different Approach for Failure Fault Isolation in 4H-SiC Power Devices Using Thermal Analysis

P. P. Barbarino; E. Vitanza; G. Anastasi; M. Astuto; G. Calvagno; F. Giarrizzo; D. Mello

ISTFA 2023; 519-523https://doi.org/10.31399/asm.cp.istfa2023p0519

View Articletitled, A Different Approach for Failure Fault Isolation in 4H-SiC Power Devices Using Thermal Analysis

Product Yield, Test, and Diagnostics

Detection and Localization of Undesired Quasi-Static Transitions in a Scan Flip-Flop

A.A. Merassi; S. Frascolla; P. Sacchi; M. Raimondi; A. Jossa

ISTFA 2023; 524-527https://doi.org/10.31399/asm.cp.istfa2023p0524

View Articletitled, Detection and Localization of Undesired Quasi-Static Transitions in a Scan Flip-Flop

Cell-Aware Test Integration Towards Achieving 0 DPPB on Automotive Designs

Saidapet Ramesh; Nikila Krishnamurthy; Siddharth Jha; Jun Keat Loh; Gary S. Clark; CP Ling

ISTFA 2023; 528-533https://doi.org/10.31399/asm.cp.istfa2023p0528

View Articletitled, Cell-Aware Test Integration Towards Achieving 0 DPPB on Automotive Designs

Sample Preparation and Device Deprocessing

Efficient Technique In Decapsulating Mounted Device Using Aluminum Tape

John Michael Saputil; Vicente Pasating

ISTFA 2023; 534-537https://doi.org/10.31399/asm.cp.istfa2023p0534

View Articletitled, Efficient Technique In Decapsulating Mounted Device Using Aluminum Tape

Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products

Eugene Beboso; Brian Yabut; Rona Balabbo; Mac Masiris

ISTFA 2023; 538-549https://doi.org/10.31399/asm.cp.istfa2023p0538

View Articletitled, Innovation in Copper Bond Wire Package Immersion Decapsulation Technique for Stressed Soic Products

Top-Down Microelectronic Device Delayering Work Flow: Nanometer-Scale Uniformity Over a Millimeter-Scale Area

P. Nowakowski; J. Liu; C. Bonifacio; R. Li; M. Ray; P. Fischione

ISTFA 2023; 550-553https://doi.org/10.31399/asm.cp.istfa2023p0550

View Articletitled, Top-Down Microelectronic Device Delayering Work Flow: Nanometer-Scale Uniformity Over a Millimeter-Scale Area

Scanning Probe Analysis

Assessing Electronics with Advanced 3D X-ray Microscopy Techniques and Electron Microscopy

Herminso Villarraga-Gómez; Kyle Crosby; Masako Terada; Mansoureh Norouzi Rad

ISTFA 2023; 554-560https://doi.org/10.31399/asm.cp.istfa2023p0554

View Articletitled, Assessing Electronics with Advanced 3D X-ray Microscopy Techniques and Electron Microscopy

System in Package and 3D Devices

Tomography of Electrical Data in Advanced-Node SRAMs

Gregory M. Johnson; Frank Hitzel

ISTFA 2023; 561-566https://doi.org/10.31399/asm.cp.istfa2023p0561

View Articletitled, Tomography of Electrical Data in Advanced-Node SRAMs

Credits

ISTFA 2023; iii-vihttps://doi.org/10.31399/asm.cp.istfa2023fm01

View Articletitled, Credits