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ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis

IPFA 2011 Best Paper

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

Byoung-Joon Kim; Hae-A-Seul Shin; In-Suk Choi; Young-Chang Joo

ISTFA 2011; 1-4https://doi.org/10.31399/asm.cp.istfa2011p0001

View Articletitled, Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

Advanced Techniques

A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response

Franco Stellari; Peilin Song; Alan J. Weger; Tomonori Nakamura; Stanley Kim; Robert Roche

ISTFA 2011; 5-11https://doi.org/10.31399/asm.cp.istfa2011p0005

View Articletitled, A Position-Sensitive, Single-Photon Detector with Enhanced NIR Response

Advanced Scan Chain Failure Analysis Using Laser Modulation Mapping and Continuous Wave Probing

Steven Kasapi; William Lo; Joy Liao; Bruce Cory; Howard Marks

ISTFA 2011; 12-17https://doi.org/10.31399/asm.cp.istfa2011p0012

View Articletitled, Advanced Scan Chain Failure Analysis Using Laser Modulation Mapping and Continuous Wave Probing

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

Guillaume Celi; Sylvain Dudit; Thierry Parrassin; Philippe Perdu; Antoine Reverdy; Dean Lewis; Michel Vallet

ISTFA 2011; 18-23https://doi.org/10.31399/asm.cp.istfa2011p0018

View Articletitled, Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

Jayhoon Chung; Guoda Lian; Lew Rabenberg

ISTFA 2011; 24-25https://doi.org/10.31399/asm.cp.istfa2011p0024

View Articletitled, Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

Correcting for Spherical Aberrations in Solid Immersion Microscopy Using a Deformable Mirror

Y. Lu; E. Ramsay; C. Stockbridge; F. H. Koklu; A. Yurt; J. Mertz; T. G. Bifano; M. S. Ünlü; B. B. Goldberg

ISTFA 2011; 26-30https://doi.org/10.31399/asm.cp.istfa2011p0026

View Articletitled, Correcting for Spherical Aberrations in Solid Immersion Microscopy Using a Deformable Mirror

Circuit Edit

The Challenges of Backside Focused Ion Beam (FIB) Editing in the Presence of Deep Trench Decoupling Capacitors

Steven B. Herschbein; Carmelo F. Scrudato; George K. Worth; Edward S. Hermann

ISTFA 2011; 31-34https://doi.org/10.31399/asm.cp.istfa2011p0031

View Articletitled, The Challenges of Backside Focused Ion Beam (FIB) Editing in the Presence of Deep Trench Decoupling Capacitors

State of the Art Substrate Manipulation as a Tool for Enhancing Product Performance

Michael A. Gonzales; Jose Cabanillas

ISTFA 2011; 35-39https://doi.org/10.31399/asm.cp.istfa2011p0035

View Articletitled, State of the Art Substrate Manipulation as a Tool for Enhancing Product Performance

Neon Ion Microscope Nanomachining Considerations

Shida Tan; Richard H. Livengood; Roy Hallstein; Darryl Shima; Yuval Greenzweig; John Notte; Shawn McVey

ISTFA 2011; 40-45https://doi.org/10.31399/asm.cp.istfa2011p0040

View Articletitled, Neon Ion Microscope Nanomachining Considerations

Instant Solid Immersion Lens Creation in Silicon with a Focused Ion Beam – Comparing Refractive and Diffractive Methods

P. Scholz; U. Kerst; C. Boit; T. Kujawa; T. Lundquist

ISTFA 2011; 46-53https://doi.org/10.31399/asm.cp.istfa2011p0046

View Articletitled, Instant Solid Immersion Lens Creation in Silicon with a Focused Ion Beam – Comparing Refractive and Diffractive Methods

Circuit Edit and Optical Probe Development and Validation for Next Generation Process Nodes

John A. Giacobbe; Patrick Pardy; Charles A. Peterson; David Shykind; Scot E. Zickel

ISTFA 2011; 54-59https://doi.org/10.31399/asm.cp.istfa2011p0054

View Articletitled, Circuit Edit and Optical Probe Development and Validation for Next Generation Process Nodes

Package Level Failure Analysis

3DIC Fault Isolation Using the OBIRCH Approach

Ming-Sung Hsu; Yian-Liang Kuo; Yu-Ting Lin; Ru-Ying Huang; Min-Feng Ku; Chih-Horng Chang

ISTFA 2011; 60-63https://doi.org/10.31399/asm.cp.istfa2011p0060

View Articletitled, 3DIC Fault Isolation Using the OBIRCH Approach

Improving Wire Sweep Performance by Measuring Degree of Cure of Epoxy Mold Compounds

Sheila Liza B. Dal

ISTFA 2011; 64-67https://doi.org/10.31399/asm.cp.istfa2011p0064

View Articletitled, Improving Wire Sweep Performance by Measuring Degree of Cure of Epoxy Mold Compounds

Use of Lock-In Thermography for Non-Destructive 3D Defect Localization on System in Package and Stacked-Die Technology

Rudolf Schlangen; Shinobu Motegi; Toshi Nagatomo; Christian Schmidt; Frank Altmann; Hiroaki Murakami; Stewart Hollingshead; John West

ISTFA 2011; 68-73https://doi.org/10.31399/asm.cp.istfa2011p0068

View Articletitled, Use of Lock-In Thermography for Non-Destructive 3D Defect Localization on System in Package and Stacked-Die Technology

Quantitative Phase Shift Analysis for 3D Defect Localization Using Lock-in Thermography

Christian Schmidt; Frank Altmann

ISTFA 2011; 74-80https://doi.org/10.31399/asm.cp.istfa2011p0074

View Articletitled, Quantitative Phase Shift Analysis for 3D Defect Localization Using Lock-in Thermography

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

Lihong Cao; Loc Tran; Wallace Donna

ISTFA 2011; 81-85https://doi.org/10.31399/asm.cp.istfa2011p0081

View Articletitled, Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

Test, Diagnostics, and Yield Enhancement

Layout-Aware Diagnosis Leads to Efficient and Effective Physical Failure Analysis

Manish Sharma; Sergej Schwarz; Juergen Schmerberg; Kathy Yang; Ting-Pu Tai; Yuan-Shih Chen; Cheng-Yiing Chuang; Feng-Ming Kuo; Mike Brennan; James Yeh; Alan Ma

ISTFA 2011; 86-90https://doi.org/10.31399/asm.cp.istfa2011p0086

View Articletitled, Layout-Aware Diagnosis Leads to Efficient and Effective Physical Failure Analysis

Device Selection for Failure Analysis of Chain Fails Using Diagnosis Driven Yield Analysis

Chris Schuermyer; Brady Benware; Graham Rhodes; Davide Appello; Vincenzo Tancorre; Olivia Riewer

ISTFA 2011; 91-97https://doi.org/10.31399/asm.cp.istfa2011p0091

View Articletitled, Device Selection for Failure Analysis of Chain Fails Using Diagnosis Driven Yield Analysis

Debugging an Invisible Flaky Scan Chain Defect

Rahul Shukla; Richard Billings; Anurag Bakhshi; John Schulze; Atchyuth Gorti; Nagesh Tamarapalli

ISTFA 2011; 98-102https://doi.org/10.31399/asm.cp.istfa2011p0098

View Articletitled, Debugging an Invisible Flaky Scan Chain Defect

Diagnose Compound Hold Time Faults Caused by Spot Delay Defects at Clock Tree

Yu Huang; Wu-Tung Cheng; Ting-Pu Tai; Liyang Lai; Ruifeng Guo; Feng-Ming Kuo; Yuan-Shih Chen

ISTFA 2011; 103-111https://doi.org/10.31399/asm.cp.istfa2011p0103

View Articletitled, Diagnose Compound Hold Time Faults Caused by Spot Delay Defects at Clock Tree

In-Line Metrology and Inspection

A Comprehensive Analysis Methodology for Gate Oxide Integrity Failure Using Combined FA Techniques

Hua Younan; Nistala Ramesh Rao; Chen Shuting; Zhu Lei; Chia Chin Ning; Zhang Jianming; Huang Yanhua; Neo Soh Ping

ISTFA 2011; 112-117https://doi.org/10.31399/asm.cp.istfa2011p0112

View Articletitled, A Comprehensive Analysis Methodology for Gate Oxide Integrity Failure Using Combined FA Techniques

Al Bondpads, Halogens, and an ESCA-Based Search for the Invisible Cause of Poor Throughput at Wafer Probe

David W. Niles; Ronald W. Kee

ISTFA 2011; 118-126https://doi.org/10.31399/asm.cp.istfa2011p0118

View Articletitled, Al Bondpads, Halogens, and an ESCA-Based Search for the Invisible Cause of Poor Throughput at Wafer Probe

Whisker Formation in Copper Electroplating

Theresa Han; Eunin Cho; Jinwoo Heo; Seoung Jae Lee

ISTFA 2011; 127-131https://doi.org/10.31399/asm.cp.istfa2011p0127

View Articletitled, Whisker Formation in Copper Electroplating

Comprehensive Nano-Structural Approach of SSRM Nanocontact on Silicon through TEM-STEM Study

B. Domengès; T. Delaroque; K. Danilo; A. Colder

ISTFA 2011; 132-136https://doi.org/10.31399/asm.cp.istfa2011p0132

View Articletitled, Comprehensive Nano-Structural Approach of SSRM Nanocontact on Silicon through TEM-STEM Study

Highly Automated Transmission Electron Microscopy Tomography for Defect Understanding

James J. Demarest; Hong-Ying Zhai

ISTFA 2011; 137-140https://doi.org/10.31399/asm.cp.istfa2011p0137

View Articletitled, Highly Automated Transmission Electron Microscopy Tomography for Defect Understanding

Transmission Electron Microscopy Characterization of FinFET – Understanding the 3D Structure by 2D Imaging Technique

Yu Zhu; Jemima Gonsalves

ISTFA 2011; 141-145https://doi.org/10.31399/asm.cp.istfa2011p0141

View Articletitled, Transmission Electron Microscopy Characterization of FinFET – Understanding the 3D Structure by 2D Imaging Technique

Photon Based Techniques

A Comparison of Lock-in Thermography and Magnetic Current Imaging for Localizing Buried Short-Circuits

David P. Vallett

ISTFA 2011; 146-152https://doi.org/10.31399/asm.cp.istfa2011p0146

View Articletitled, A Comparison of Lock-in Thermography and Magnetic Current Imaging for Localizing Buried Short-Circuits

Scan Chain Debug Using Dynamic Lock-In Thermography

L. Forli; B. Picart; A. Reverdy; R. Schlangen

ISTFA 2011; 153-157https://doi.org/10.31399/asm.cp.istfa2011p0153

View Articletitled, Scan Chain Debug Using Dynamic Lock-In Thermography

Practical Implementation of Soft Defect Localization (SDL) in Mixed Signal and Analog ICs

Eric Barbian; Gretchen Crow; Win Thandar Swe; Mark C. Phillips

ISTFA 2011; 158-163https://doi.org/10.31399/asm.cp.istfa2011p0158

View Articletitled, Practical Implementation of Soft Defect Localization (SDL) in Mixed Signal and Analog ICs

Photon Emission Spectra through Silicon of Various Thicknesses

Arkadiusz Glowacki; Carlo Pagano; Christian Boit; Yoshiyuki Yokoyama; Arkadiusz Jankowski; Philippe Perdu

ISTFA 2011; 164-169https://doi.org/10.31399/asm.cp.istfa2011p0164

View Articletitled, Photon Emission Spectra through Silicon of Various Thicknesses

Characterization of MOS Transistors Using Dynamic Backside Reflectance Modulation Technique

J.K.J. Teo; C.M. Chua; L.S. Koh; J.C.H. Phang

ISTFA 2011; 170-175https://doi.org/10.31399/asm.cp.istfa2011p0170

View Articletitled, Characterization of MOS Transistors Using Dynamic Backside Reflectance Modulation Technique

Failure Analysis Process

Effective Fault Isolation Using Memory BIST and Logic BIST Diagnostic Techniques

Rakesh Kinger; Chuck Tong; Ayyaz Chaudhry; Vijay Chowdhury; Wenzhen Sun; Hongqi Deng; Steve Smith

ISTFA 2011; 176-181https://doi.org/10.31399/asm.cp.istfa2011p0176

View Articletitled, Effective Fault Isolation Using Memory BIST and Logic BIST Diagnostic Techniques

DRAM Static Refresh Weak Cell Characterization and Structure Analysis

Sung Ho Lee; Yong Ho Yoo; Tae Jung Park; Jin Choi; Ju Hyeon Ahn; Seok Sik Kim; Chang-Jin Kang; Seok Woo Nam; Joo Young Lee; Gyo Young Jin

ISTFA 2011; 182-184https://doi.org/10.31399/asm.cp.istfa2011p0182

View Articletitled, DRAM Static Refresh Weak Cell Characterization and Structure Analysis

A Systematic Failure Analysis to Reveal the Mystery of Lower N-Well Resistance

David Zhu; Soh Ping Neo; Alfred Quah; Ghim Boon Ang; Lei Zhu; Yanhua Huang; Hong Tak Koo; Moi Kian Yau; Ma Hninhnin; Nagalingam Dayanand

ISTFA 2011; 185-188https://doi.org/10.31399/asm.cp.istfa2011p0185

View Articletitled, A Systematic Failure Analysis to Reveal the Mystery of Lower N-Well Resistance

Fast Diagnosis and Failure Mechanism of Phosphorous Contamination in Arsenic-Implanted Silicon

Lei Zhu; H. W. Teo; K. Ong; Y.H. Huang; R. Koh; P.Y. Chew; Y.N. Hua

ISTFA 2011; 345-348https://doi.org/10.31399/asm.cp.istfa2011p0345

View Articletitled, Fast Diagnosis and Failure Mechanism of Phosphorous Contamination in Arsenic-Implanted Silicon

Failure Analysis Methodology on Unique 68mm Single Ring Pattern Due to Load Lock Burr

A.C.T Quah; G. B. Ang; C. Q. Chen; David Zhu; M. Gunawardana; J. Indahwan; M.T. Lee; S.P. Neo; Y. Chen

ISTFA 2011; 349-353https://doi.org/10.31399/asm.cp.istfa2011p0349

View Articletitled, Failure Analysis Methodology on Unique 68mm Single Ring Pattern Due to Load Lock Burr

Influence of Laser Radiation on Embedded Non Volatile Memories and Its Application for Descrambling Verification

I. Österreicher; J. Skuras; A. Haase

ISTFA 2011; 354-358https://doi.org/10.31399/asm.cp.istfa2011p0354

View Articletitled, Influence of Laser Radiation on Embedded Non Volatile Memories and Its Application for Descrambling Verification

Systematic EFA Approach in Locating Floating Nodes in Analog Mixed Signal Devices

Sagar Karki

ISTFA 2011; 359-361https://doi.org/10.31399/asm.cp.istfa2011p0359

View Articletitled, Systematic EFA Approach in Locating Floating Nodes in Analog Mixed Signal Devices

Challenges and Benefits of Product-Like SRAM in Technology Development

Felix Beaudoin; Stephen Lucarini; Fred Towler; Stephen Wu; Zhigang Song; David Albert; Laura Safran; John Sylvestri; Gauri Karve; Xiaojun Yu; Eli Kachir; Noam Jungmann

ISTFA 2011; 362-366https://doi.org/10.31399/asm.cp.istfa2011p0362

View Articletitled, Challenges and Benefits of Product-Like SRAM in Technology Development

Nanoprobing

From the Store Shelf to Device-Level Atom Probe Analysis: An Exercise in Feasibility

D. J. Larson; D. Lawrence; D. Olson; T. J. Prosa; R. M. Ulfig; D. A. Reinhard; P. H. Clifton; T. F. Kelly; W. Lefebvre

ISTFA 2011; 189-197https://doi.org/10.31399/asm.cp.istfa2011p0189

View Articletitled, From the Store Shelf to Device-Level Atom Probe Analysis: An Exercise in Feasibility

Non-Visible Defect Analysis of OTP Device

C.Q. Chen; G.B. Ang; Z.X. Xing; Y.N. Hua; Z.Q. Mo; Rao Ramesh; Y. Li

ISTFA 2011; 198-201https://doi.org/10.31399/asm.cp.istfa2011p0198

View Articletitled, Non-Visible Defect Analysis of OTP Device

Addressing Stress-Memorization-Technology (SMT) Induced Defects

Terence Kane; Yun Yu Wang; Michael Tenney; Richard Oldrey; Manuel Villalobos; John Sylvestri; Genadi Tverskoy

ISTFA 2011; 202-206https://doi.org/10.31399/asm.cp.istfa2011p0202

View Articletitled, Addressing Stress-Memorization-Technology (SMT) Induced Defects

Flash Single Bit Cycling Fail Due to Charge Accumulation from Incorrect Lateral Drain Junction Formation

Keith Harber; Sam Subramanian; Tony Chrastecky; Khiem Ly; Fuchen Mu

ISTFA 2011; 207-211https://doi.org/10.31399/asm.cp.istfa2011p0207

View Articletitled, Flash Single Bit Cycling Fail Due to Charge Accumulation from Incorrect Lateral Drain Junction Formation

Identification of Extension Implant Defect in Sub-Micron CMOS ICs – Analysis Technique, Model, and Solution

Yuk L. Tsang; Giri Nallapati; Ron Skarupa; Brian Anthony

ISTFA 2011; 212-217https://doi.org/10.31399/asm.cp.istfa2011p0212

View Articletitled, Identification of Extension Implant Defect in Sub-Micron CMOS ICs – Analysis Technique, Model, and Solution

A Sample Preparation Technique to Localize Gate Oxide Defects in Memory Arrays Using Conducting Atomic Force Microscopy

Lakshminarayanan Lakshmanan; Lowell Herlinger; Kathryn Miller

ISTFA 2011; 218-222https://doi.org/10.31399/asm.cp.istfa2011p0218

View Articletitled, A Sample Preparation Technique to Localize Gate Oxide Defects in Memory Arrays Using Conducting Atomic Force Microscopy

Electrical Signature Verification and Fault Localization in High-Density DRAM Device Using Atomic Force Probe

Wei-Chih Wang; San-Lin Liew; Hua-Sheng Chen; Kuang-Liang Chen; Jian-Shing Luo

ISTFA 2011; 269-274https://doi.org/10.31399/asm.cp.istfa2011p0269

View Articletitled, Electrical Signature Verification and Fault Localization in High-Density DRAM Device Using Atomic Force Probe

Advanced Backside Defect Isolation Techniques Using Electron Beam Absorbed Current to Locate Metal Defectivity on Bulk and SOI Technology

K. Erington; K. Dickson; G. Lange; J. Z. Garcia; J. Ybarra; N. Wetterling

ISTFA 2011; 275-286https://doi.org/10.31399/asm.cp.istfa2011p0275

View Articletitled, Advanced Backside Defect Isolation Techniques Using Electron Beam Absorbed Current to Locate Metal Defectivity on Bulk and SOI Technology

A Study of a Characteristics Variability Evaluation in an Actual LSI Circuit with Nanoprobing Technique

Munetoshi Fukui; Yasuhiko Nara; Takaaki Tsunomura; Akio Nishida; Junichi Fuse

ISTFA 2011; 287-292https://doi.org/10.31399/asm.cp.istfa2011p0287

View Articletitled, A Study of a Characteristics Variability Evaluation in an Actual LSI Circuit with Nanoprobing Technique

Fault Isolation of Dense High Rc Array by Using Conductive Atomic Force Microscopy

Wei-Shan Hu; Hui-Wen Yang; Yung-Sheng Huang

ISTFA 2011; 293-295https://doi.org/10.31399/asm.cp.istfa2011p0293

View Articletitled, Fault Isolation of Dense High Rc Array by Using Conductive Atomic Force Microscopy

Scanning Capacitance Microscopy: A Valuable Tool to Diagnose Current Paths in 3D-Capacitors Process

Thomas Delaroque; Karine Danilo; Frédéric Voiron; Catherine Bunel; Bernadette Domengès; Marc Laflutte; Renzo Dalmolin

ISTFA 2011; 316-321https://doi.org/10.31399/asm.cp.istfa2011p0316

View Articletitled, Scanning Capacitance Microscopy: A Valuable Tool to Diagnose Current Paths in 3D-Capacitors Process

Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

Jong Hak Lee; Yu Jun Lee; Jung Sam Kim; Seo Kyung Jeong; Min Su Kim; Seok Hoon Oh; Kyoung Wook Jung; Soo Yong Son; Chang Reol Kim

ISTFA 2011; 322-326https://doi.org/10.31399/asm.cp.istfa2011p0322

View Articletitled, Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

Electroless Cobalt Plating on Copper Structures for Nano-Probing

Wen-Hsien Chuang; Ting Zhong; Baohua Niu

ISTFA 2011; 327-329https://doi.org/10.31399/asm.cp.istfa2011p0327

View Articletitled, Electroless Cobalt Plating on Copper Structures for Nano-Probing

Sensors, Discretes, and Optoelectronic Devices

Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

Huixian Wu; Arthur Chiang; David Le; Win Pratchayakun

ISTFA 2011; 223-229https://doi.org/10.31399/asm.cp.istfa2011p0223

View Articletitled, Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

Infrared Thermography Developments for III-V Transistors and MMICs

Dominique Carisetti; Mohsine Bouya; Odile Bezencenet; Bernard Servet; Jean-Claude Clément; Benoit Lambert; Laurent Caille; Nathalie Malbert; Nathalie Labat

ISTFA 2011; 230-233https://doi.org/10.31399/asm.cp.istfa2011p0230

View Articletitled, Infrared Thermography Developments for III-V Transistors and MMICs

Detecting and Preventing Counterfeit Microelectronics

Detection of a Counterfeit OTA Device and Certification of a Replacement Source

Yong Hong

ISTFA 2011; 234-237https://doi.org/10.31399/asm.cp.istfa2011p0234

View Articletitled, Detection of a Counterfeit OTA Device and Certification of a Replacement Source

DNA to Safeguard Electrical Components and Protect Against Counterfeiting and Diversion

James A. Hayward; Janice Meraglia

ISTFA 2011; 238-241https://doi.org/10.31399/asm.cp.istfa2011p0238

View Articletitled, DNA to Safeguard Electrical Components and Protect Against Counterfeiting and Diversion

Sample Preparation

Backside De-Processing of Integrated Circuits 40 nm and Below

Yuanjing Li; Steven Scott; Howard Lee Marks

ISTFA 2011; 242-247https://doi.org/10.31399/asm.cp.istfa2011p0242

View Articletitled, Backside De-Processing of Integrated Circuits 40 nm and Below

New Method for Decapsulation of Copper Wire Devices Using LASER and Subambient Temperature Chemical Etch

Matthew J. Lefevre; Frédéric Beauquis; Michael Obein; Pascal Gounet; Sandrine Barberan

ISTFA 2011; 248-255https://doi.org/10.31399/asm.cp.istfa2011p0248

View Articletitled, New Method for Decapsulation of Copper Wire Devices Using LASER and Subambient Temperature Chemical Etch

New Front Side Access Approach for Low-k Dielectric/Cu Technologies in Plastic Package

Amandine Aubert; Lionel Dantas de Morais; Stéphanie Pétremont; Nathalie Labat; Hélène Frémont

ISTFA 2011; 256-261https://doi.org/10.31399/asm.cp.istfa2011p0256

View Articletitled, New Front Side Access Approach for Low-k Dielectric/Cu Technologies in Plastic Package

A Novel Low Cost Technique to Perform Concurrent Topside and Backside Analysis of a Bare Die

Raj Kabadi; Win Thandar Swe

ISTFA 2011; 262-268https://doi.org/10.31399/asm.cp.istfa2011p0262

View Articletitled, A Novel Low Cost Technique to Perform Concurrent Topside and Backside Analysis of a Bare Die

Development of a Protective Coating for Application of Ion Cross-Section Polishing on Thermal Inkjet Printhead Heater Chips

Q. Zhang; X. M. Wu

ISTFA 2011; 296-300https://doi.org/10.31399/asm.cp.istfa2011p0296

View Articletitled, Development of a Protective Coating for Application of Ion Cross-Section Polishing on Thermal Inkjet Printhead Heater Chips

Impacts of Sample Preparation Methodology on TEM Failure Analysis of Advanced Semiconductor Devices

Yongkai Zhou; Jie Zhu; Han Wei Teo; ACT Quah; Lei Zhu; Anyan Du; Younan Hua

ISTFA 2011; 301-304https://doi.org/10.31399/asm.cp.istfa2011p0301

View Articletitled, Impacts of Sample Preparation Methodology on TEM Failure Analysis of Advanced Semiconductor Devices

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

Liew Kaeng Nan; Lee Meng Lung

ISTFA 2011; 305-307https://doi.org/10.31399/asm.cp.istfa2011p0305

View Articletitled, TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

Multiple-Post In-Situ Lift-Out Grids Preparation Using a Dicing Saw

Jian-Shing Luo; Hsiu-Ting Lee; San-Lin Liew; Ching-Shan Sung; Yi-Jing Wu

ISTFA 2011; 308-315https://doi.org/10.31399/asm.cp.istfa2011p0308

View Articletitled, Multiple-Post In-Situ Lift-Out Grids Preparation Using a Dicing Saw

Energy and Space Applications

Can Illuminated IV-Characteristics of Micro-Regions in Solar Cells be Measured by Laser-Induced Stimulation?

M. Boostandoost; A. Glowacki; O. Bakaeva; U. Kerst; C. Boit

ISTFA 2011; 330-335https://doi.org/10.31399/asm.cp.istfa2011p0330

View Articletitled, Can Illuminated IV-Characteristics of Micro-Regions in Solar Cells be Measured by Laser-Induced Stimulation?

Setup for Locating PV-Cell Defects through I_SC Measurements

Santhosh Shankar; Andreas Bernhardt; Balaji Srinivasan; Sravanthi Enimidisetty; Martin Versen

ISTFA 2011; 336-339https://doi.org/10.31399/asm.cp.istfa2011p0336

View Articletitled, Setup for Locating PV-Cell Defects through I<sub>SC</sub> Measurements

All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

M. Kasemann; L.M. Reindl; B. Michl; W. Warta; A. Schütt; J. Carstensen

ISTFA 2011; 340-344https://doi.org/10.31399/asm.cp.istfa2011p0340

View Articletitled, All-Contactless Measurement of Series Resistance Distributions on Solar Cells with Photoluminescence Imaging

Poster Session

Activity Analysis at Low Power Supply on 45nm Technology

Guillaume Bascoul; Philippe Perdu; Kevin Sanchez; Dean Lewis; Sylvain Dudit; Guillaume Celi

ISTFA 2011; 367-372https://doi.org/10.31399/asm.cp.istfa2011p0367

View Articletitled, Activity Analysis at Low Power Supply on 45nm Technology

CHIPSCANNER: Reverse Engineering Solution for Microchips at the Nanometer-Scale

Joseph Klingfus; Kevin Burcham; Martin Rasche; Thomas Borchert; Niklas Damnik

ISTFA 2011; 373-376https://doi.org/10.31399/asm.cp.istfa2011p0373

View Articletitled, CHIPSCANNER: Reverse Engineering Solution for Microchips at the Nanometer-Scale

Acoustic Micro Imaging of Large Objects

Daniel J. D. Sullivan; Jesse A. Guzman

ISTFA 2011; 377-381https://doi.org/10.31399/asm.cp.istfa2011p0377

View Articletitled, Acoustic Micro Imaging of Large Objects

Design Based Failure Analysis of a Voltage Sensitive Memory Defect

Andrew Bowsher; Cary A. Gloor; Bruce Griffiths; Chris McMahon

ISTFA 2011; 382-386https://doi.org/10.31399/asm.cp.istfa2011p0382

View Articletitled, Design Based Failure Analysis of a Voltage Sensitive Memory Defect

Failure Analysis Method of Using Laser Nano Electrostatic Field Probe Sensor (L-NEPS)

Seigo Ito; Hiroko Sodeyama; Kiyoaki Takiguchi; Toru Matsumoto

ISTFA 2011; 387-392https://doi.org/10.31399/asm.cp.istfa2011p0387

View Articletitled, Failure Analysis Method of Using Laser Nano Electrostatic Field Probe Sensor (L-NEPS)

Split-Gate Flash Memory Cell Odd/Even Fail Pattern Failure Analysis

Re-Long Chiu; Jason Higgins; Shu-Lan Ying; Jones Chung; Gang Wang; Xu Liu; Ty Lim

ISTFA 2011; 393-395https://doi.org/10.31399/asm.cp.istfa2011p0393

View Articletitled, Split-Gate Flash Memory Cell Odd/Even Fail Pattern Failure Analysis

Failure Localization by Using a Novel Backside Passive Voltage Contrast Methodology

Kuo Hsiung Chen; Chih-Chung Chang; Jian Chan Lin

ISTFA 2011; 396-398https://doi.org/10.31399/asm.cp.istfa2011p0396

View Articletitled, Failure Localization by Using a Novel Backside Passive Voltage Contrast Methodology

Novel Gox Inspection Methodology in Advanced Silicon Process

Kuo Yu Wang; Kuo Hsiung Chen; Jian Chang Lin; W. S. Wu

ISTFA 2011; 399-402https://doi.org/10.31399/asm.cp.istfa2011p0399

View Articletitled, Novel Gox Inspection Methodology in Advanced Silicon Process

A Novel ONO Inspection Methodology for DRAM Deep Trench Structure

Kuo Hsiung Chen; Chih-Chung Chang; Jian Chan Lin

ISTFA 2011; 403-405https://doi.org/10.31399/asm.cp.istfa2011p0403

View Articletitled, A Novel ONO Inspection Methodology for DRAM Deep Trench Structure

Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits

A. Yurt; E. Ramsay; F. H. Köklü; M. S. Ünlü; B. B. Goldberg

ISTFA 2011; 406-409https://doi.org/10.31399/asm.cp.istfa2011p0406

View Articletitled, Chromatic Aberration Correction of Silicon Aplanatic Solid Immersion Lens for Photon Emission Microscopy of Integrated Circuits

Development of an Automated TDR System for Package Failure Analysis

Christopher C. Basilioa; Hieu Trong Nguyenb; Arlene Aguinaldoc; Jan Paul Arboledac; Richmond Angd; Daniel Anod; Paul Paranald; Armand Magpantayd

ISTFA 2011; 410-413https://doi.org/10.31399/asm.cp.istfa2011p0410

View Articletitled, Development of an Automated TDR System for Package Failure Analysis

Hardness of Rinse Water and Swelling Behavior of Dry Film Photo-Resist

Song-I Kim; JinWoo Heo; YunHee Kim; Yeonseop Yu; ChungSik Choi; JaeSu Yu

ISTFA 2011; 414-418https://doi.org/10.31399/asm.cp.istfa2011p0414

View Articletitled, Hardness of Rinse Water and Swelling Behavior of Dry Film Photo-Resist

A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices

Peter Jacob; Albert Kunz; Giovanni Nicoletti

ISTFA 2011; 419-423https://doi.org/10.31399/asm.cp.istfa2011p0419

View Articletitled, A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices

A Method of Stress Reduction during Silicon Thinning

Matthew M. Mulholland; Robert P. Wadell

ISTFA 2011; 424-427https://doi.org/10.31399/asm.cp.istfa2011p0424

View Articletitled, A Method of Stress Reduction during Silicon Thinning

Methodology and Application of Backside Physical Failure Analysis

Li-Lung Lai; HungLing Chen; Huimin Gao

ISTFA 2011; 428-433https://doi.org/10.31399/asm.cp.istfa2011p0428

View Articletitled, Methodology and Application of Backside Physical Failure Analysis

A Study of SRAM Device Soft Failures Caused by Contact Volcano Defects Using Nanoprobing Analysis

Yu Hsiang Shu; Vincent Huang; Chia Hsing Chao

ISTFA 2011; 434-438https://doi.org/10.31399/asm.cp.istfa2011p0434

View Articletitled, A Study of SRAM Device Soft Failures Caused by Contact Volcano Defects Using Nanoprobing Analysis

New Failure Analysis Method for Laser Voltage Probing (LVP) Utilizing System Evaluation Board and Software

Suk Ho Lee; Yun Woo Lee; Moo Jong Hong; Sung Jun Yun; Eun Cheol Lee; Kyu Shik Hong

ISTFA 2011; 439-442https://doi.org/10.31399/asm.cp.istfa2011p0439

View Articletitled, New Failure Analysis Method for Laser Voltage Probing (LVP) Utilizing System Evaluation Board and Software

Evaluation of Electrical Properties of Cell Area on the Semiconductor Devices by FIB Technique

Jangwon Oh; Jonghyeb Kim; Jonghak Lee; Jongmin Kim; Taesun Back; Won Kim; Hojoung Kim; Changreol Kim

ISTFA 2011; 443-445https://doi.org/10.31399/asm.cp.istfa2011p0443

View Articletitled, Evaluation of Electrical Properties of Cell Area on the Semiconductor Devices by FIB Technique

Manuscript from 2010 Conference

The “Perfect Storm” Now Appearing in FA Labs Everywhere

Gary F. Shade; Bhanu Sood

ISTFA 2011; 446-452https://doi.org/10.31399/asm.cp.istfa2011p0446

View Articletitled, The “Perfect Storm” Now Appearing in FA Labs Everywhere

Volume Information

Credits

ISTFA 2011; iii-vihttps://doi.org/10.31399/asm.cp.istfa2011fm01

View Articletitled, Credits