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ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis

IPFA 2010 Best Paper

Combining High-Resolution Pulsed TIVA and Nanoprobing Techniques to Identify Drive Strength Issues in Mixed-Signal Circuits

V.K. Ravikumar; M.Y. Ho; R.R. Goruganthu; S.L. Phoa; V. Narang; J.M. Chin

ISTFA 2010; 1-4https://doi.org/10.31399/asm.cp.istfa2010p0001

View Articletitled, Combining High-Resolution Pulsed TIVA and Nanoprobing Techniques to Identify Drive Strength Issues in Mixed-Signal Circuits

Advanced Techniques

Laser Voltage Imaging: A New Perspective of Laser Voltage Probing

Yin S. Ng; Ted Lundquist; Dmitry Skvortsov; Joy Liao; Steven Kasapi; Howard Marks

ISTFA 2010; 5-13https://doi.org/10.31399/asm.cp.istfa2010p0005

View Articletitled, Laser Voltage Imaging: A New Perspective of Laser Voltage Probing

Two-Photon X-Variation Mapping Based on a Diode-Pumped Femtosecond Laser

K. A. Serrels; D. T. Reid; T. R. Lundquist; P. Vedagarbha

ISTFA 2010; 14-19https://doi.org/10.31399/asm.cp.istfa2010p0014

View Articletitled, Two-Photon X-Variation Mapping Based on a Diode-Pumped Femtosecond Laser

Quantitative, Nanoscale Free-Carrier Concentration Mapping Using Terahertz Nearfield Nanoscopy

J. Wittborn; R. Weiland; A. J. Huber; F. Keilmann; R. Hillenbrand

ISTFA 2010; 20-26https://doi.org/10.31399/asm.cp.istfa2010p0020

View Articletitled, Quantitative, Nanoscale Free-Carrier Concentration Mapping Using Terahertz Nearfield Nanoscopy

Laser-Thermal Imaging

R. Aaron Falk; Tram Pham

ISTFA 2010; 27-31https://doi.org/10.31399/asm.cp.istfa2010p0027

View Articletitled, Laser-Thermal Imaging

Mobile Diffractive Solid Immersion Lens Design for Backside Laser Based Fault Localization

S.H. Goh; J.Y. Cho; Jeffrey Lam; J.C.H. Phang

ISTFA 2010; 32-37https://doi.org/10.31399/asm.cp.istfa2010p0032

View Articletitled, Mobile Diffractive Solid Immersion Lens Design for Backside Laser Based Fault Localization

Failure Analysis Process

Volume Electrical Failure Analysis for Product-Specific Yield Enhancement

Steven Kasapi; Joy Liao; Bruce Cory; Izak Kapilevich; Richard Portune; Yin Shyang Ng; Cathy Kardach; Elaine Cheng

ISTFA 2010; 38-48https://doi.org/10.31399/asm.cp.istfa2010p0038

View Articletitled, Volume Electrical Failure Analysis for Product-Specific Yield Enhancement

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

Sarven Ipek; David Grosjean

ISTFA 2010; 49-53https://doi.org/10.31399/asm.cp.istfa2010p0049

View Articletitled, Case Study in Fault Isolation of a Metal Short for Yield Enhancement

Inter Layer Dielectric Defect Induced High Contact Resistance

Re-Long Chiu; Jason Higgins; Toby Kinder; Juha Tyni; Sharon Ying; Jones Chung

ISTFA 2010; 54-57https://doi.org/10.31399/asm.cp.istfa2010p0054

View Articletitled, Inter Layer Dielectric Defect Induced High Contact Resistance

Failure Analysis Methodology on Systematic Defect in ADC_PLL Ring Pattern Due to Plasma De-Chuck Process

Ang Ghim Boon; Chen Changqing; Alfred Quah; Magdeliza; Indahwan Jony; Lee Mern Tat; David Zhu; Neo Soh Ping

ISTFA 2010; 58-61https://doi.org/10.31399/asm.cp.istfa2010p0058

View Articletitled, Failure Analysis Methodology on Systematic Defect in ADC_PLL Ring Pattern Due to Plasma De-Chuck Process

Fault Isolation of Sub-Surface Leakage Defects Using Electron Beam Induced Current Characterization in Next-Generation Flash Memory Technology Development

Go Nagatani; Kenneth Yu; Amalia Del Rosario; Max Sidorov; Richard E. Stallcup, II; Joel-Anthony Gray

ISTFA 2010; 62-65https://doi.org/10.31399/asm.cp.istfa2010p0062

View Articletitled, Fault Isolation of Sub-Surface Leakage Defects Using Electron Beam Induced Current Characterization in Next-Generation Flash Memory Technology Development

A Case Study: Observation of Counter Doping of Gate Poly and Its Validation in High Density 90nm CMOS SRAM Bitcell

Yuk Tsang; Xiang-Dong Wang; Michael Mendicino; Andrew Blankenship

ISTFA 2010; 66-70https://doi.org/10.31399/asm.cp.istfa2010p0066

View Articletitled, A Case Study: Observation of Counter Doping of Gate Poly and Its Validation in High Density 90nm CMOS SRAM Bitcell

Package Level Failure Analysis

Magnetic Microscopy for 3D Structures: Use of the Simulation Approach for the Precise Localization of Deep Buried Weak Currents

Fulvio Infante; Rodolphe Gomes; Philippe Perdu; Fabien Battistella; Sebastien Annereau; Dean Lewis

ISTFA 2010; 71-78https://doi.org/10.31399/asm.cp.istfa2010p0071

View Articletitled, Magnetic Microscopy for 3D Structures: Use of the Simulation Approach for the Precise Localization of Deep Buried Weak Currents

Advanced Sample Preparation Method for Lead Free Bump IMC and Solder Grain Image Enhancement

Ming-Song Sheu; Yian-Liang Kuo; Jeng-Hun Lee; Yu-Ting Lin; Hui-Chen Chu; Tsung-Fu Tsai; Chih-Horng Chang

ISTFA 2010; 79-83https://doi.org/10.31399/asm.cp.istfa2010p0079

View Articletitled, Advanced Sample Preparation Method for Lead Free Bump IMC and Solder Grain Image Enhancement

Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications

Sebastian Brand; Matthias Petzold; Peter Czurratis; Peter Hoffrogge

ISTFA 2010; 84-91https://doi.org/10.31399/asm.cp.istfa2010p0084

View Articletitled, Extending Acoustic Microscopy for Comprehensive Failure Analysis Applications

Root-Cause Investigations of Stitch Bond – Shearing by Means of 3D-X-ray Computer Tomography (XCT), Metallographic Polishing and FIB

Peter Jacob; Iwan Jerjen; Giovanni Nicoletti

ISTFA 2010; 444-448https://doi.org/10.31399/asm.cp.istfa2010p0444

View Articletitled, Root-Cause Investigations of Stitch Bond – Shearing by Means of 3D-X-ray Computer Tomography (XCT), Metallographic Polishing and FIB

Methodology for Analysis of Schottky Diode Failures

Bhanu P. Sood; Michael Pecht; John Miker; Tom Wanek

ISTFA 2010; 449-456https://doi.org/10.31399/asm.cp.istfa2010p0449

View Articletitled, Methodology for Analysis of Schottky Diode Failures

Resolving the Failure Analysis Challenges on Stacked Die Structure in Lead Frame Chip Scale Package

Raymond G. Mendaros; Jon Carlo P. Salimbangon

ISTFA 2010; 457-464https://doi.org/10.31399/asm.cp.istfa2010p0457

View Articletitled, Resolving the Failure Analysis Challenges on Stacked Die Structure in Lead Frame Chip Scale Package

Sample Preparation

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

J.G. van Hassel; Xiao-Mei Zhang

ISTFA 2010; 92-97https://doi.org/10.31399/asm.cp.istfa2010p0092

View Articletitled, Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

X-Sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites

Xiang-Dong Wang; Yuk Tsang; Clifford Howard

ISTFA 2010; 98-101https://doi.org/10.31399/asm.cp.istfa2010p0098

View Articletitled, X-Sectional Scanning Capacitance Microscopy (SCM) Applications on Deep Submicron Devices at Specific Sites

High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring

Hyoung H. Kang; John F. King; Oliver D. Patterson; Steven B. Herschbein; James P. Nadeau; Scott E. Fuller

ISTFA 2010; 102-107https://doi.org/10.31399/asm.cp.istfa2010p0102

View Articletitled, High Volume and Fast Turnaround Automated Inline TEM Sample Preparation for Manufacturing Process Monitoring

A Novel Wet Etch In-situ Decapsulation of Devices on Boards

Michael A. Gonzales; Joanna Kiljan

ISTFA 2010; 122-126https://doi.org/10.31399/asm.cp.istfa2010p0122

View Articletitled, A Novel Wet Etch In-situ Decapsulation of Devices on Boards

Low Temperature Plasma Decapsulation of Copper-Wire-Bonded and Exposed Copper Metallization Devices

Kristopher D. Staller

ISTFA 2010; 127-132https://doi.org/10.31399/asm.cp.istfa2010p0127

View Articletitled, Low Temperature Plasma Decapsulation of Copper-Wire-Bonded and Exposed Copper Metallization Devices

Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry

Jake E. Klein; Lucas Copeland

ISTFA 2010; 133-136https://doi.org/10.31399/asm.cp.istfa2010p0133

View Articletitled, Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry

Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis

Frank Altmann; Matthias Petzold; Christian Schmidt; Roland Salzer; Cathal Cassidy; Paul Tesch; Noel Smith

ISTFA 2010; 163-170https://doi.org/10.31399/asm.cp.istfa2010p0163

View Articletitled, Characterization and Failure Analysis of 3D Integrated Semiconductor Devices—Novel Tools for Fault Isolation, Target Preparation and High Resolution Material Analysis

A Novel Junction Profiling Methodology

Tomokazu Nakai

ISTFA 2010; 171-175https://doi.org/10.31399/asm.cp.istfa2010p0171

View Articletitled, A Novel Junction Profiling Methodology

Improvement of Optical Resolution through Chip Backside Using FIB Trenches

Arkadiusz Glowacki; Clemens Helfmeier; Uwe Kerst; Christian Boit; Philippe Perdu

ISTFA 2010; 176-180https://doi.org/10.31399/asm.cp.istfa2010p0176

View Articletitled, Improvement of Optical Resolution through Chip Backside Using FIB Trenches

Copper to Aluminum Bonding: IMC Characterization through New Mechanical Sectioning Methods

Lucas Copeland; Mukul Saran

ISTFA 2010; 181-185https://doi.org/10.31399/asm.cp.istfa2010p0181

View Articletitled, Copper to Aluminum Bonding: IMC Characterization through New Mechanical Sectioning Methods

Sample Preparation and Analysis on Full-Thickness Silicon Wafers for Wafer-to-Wafer Bonding Process Development

Richard J. Young; Alex Buxbaum; Corey Senowitz; C. Deeb; W.H. Teh

ISTFA 2010; 186-190https://doi.org/10.31399/asm.cp.istfa2010p0186

View Articletitled, Sample Preparation and Analysis on Full-Thickness Silicon Wafers for Wafer-to-Wafer Bonding Process Development

In-Line Metrology and Inspection

Backscattered Electron Imaging for Embedded Subtle Defects in 32nm Processes

Z. G. Song; H. S. Song; J. Yu; T. Su

ISTFA 2010; 108-112https://doi.org/10.31399/asm.cp.istfa2010p0108

View Articletitled, Backscattered Electron Imaging for Embedded Subtle Defects in 32nm Processes

Semi-Automated Full Wafer In-Line SRAM Failure Analysis by Dual Beam Focused Ion Beam (FIB)

Steven B. Herschbein; Hyoung H. Kang; Harvey E. Berman; Carmelo F. Scrudato; Aaron D. Shore; Bing Dai

ISTFA 2010; 113-116https://doi.org/10.31399/asm.cp.istfa2010p0113

View Articletitled, Semi-Automated Full Wafer In-Line SRAM Failure Analysis by Dual Beam Focused Ion Beam (FIB)

Simulation Studies of Fluorine-Induced Corrosion and Defects on Microchip Al Bondpads in Wafer Fabrication

Hua Younan; Nistala Ramesh Rao

ISTFA 2010; 117-121https://doi.org/10.31399/asm.cp.istfa2010p0117

View Articletitled, Simulation Studies of Fluorine-Induced Corrosion and Defects on Microchip Al Bondpads in Wafer Fabrication

Energy-Dispersive X-ray Spectrometry Performance on Multiple Transmission Electron Microscope Platforms

James Demarest; Chris Deeb; Thomas Murray; Hong-Ying Zhai

ISTFA 2010; 301-303https://doi.org/10.31399/asm.cp.istfa2010p0301

View Articletitled, Energy-Dispersive X-ray Spectrometry Performance on Multiple Transmission Electron Microscope Platforms

Highly Resistive AlN Formation in TiN / AlCu / TiN Stack Evidenced by EELS TEM and XPS

B. Delahaye; H. Fray; J.P. Brun; N. Guilbaud; P. Tabary; S. Lariviere; D. Basso; M. Modi; M. Idir

ISTFA 2010; 304-308https://doi.org/10.31399/asm.cp.istfa2010p0304

View Articletitled, Highly Resistive AlN Formation in TiN / AlCu / TiN Stack Evidenced by EELS TEM and XPS

Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

Lim Soon Huat; Lwin Hnin-Ei; Vinod Narang; J.M. Chin

ISTFA 2010; 309-316https://doi.org/10.31399/asm.cp.istfa2010p0309

View Articletitled, Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

Wafer Level Atomic Force Probing

Terence Kane; Sweta Pendyala; Michael P. Tenney

ISTFA 2010; 317-319https://doi.org/10.31399/asm.cp.istfa2010p0317

View Articletitled, Wafer Level Atomic Force Probing

Energy and Space Applications

Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics

Martin Kittler; Tzanimir Arguirov; Reiner Schmid; Winfried Seifert; Teimuraz Mchedlidze

ISTFA 2010; 137-142https://doi.org/10.31399/asm.cp.istfa2010p0137

View Articletitled, Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics

Quality Evaluation Techniques of Solar Cell Module

Daisuke Murahara; Wataru Shimizu; Hidehisa Kubota; Tamiko Oda; Kazuhiro Yabe

ISTFA 2010; 143-150https://doi.org/10.31399/asm.cp.istfa2010p0143

View Articletitled, Quality Evaluation Techniques of Solar Cell Module

Combined Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam (FIB) Techniques for Thin Film Solar Cell Characterization

Frank Altmann; Jan Schischka; Vinh Van Ngo; Stacey Stone; Laurens F. Tz. Kwakman; Ralf Lehmann

ISTFA 2010; 151-157https://doi.org/10.31399/asm.cp.istfa2010p0151

View Articletitled, Combined Electron Beam Induced Current Imaging (EBIC) and Focused Ion Beam (FIB) Techniques for Thin Film Solar Cell Characterization

Activation Energy Analysis of Dark and Laser Illuminated I-V Characteristics of Thin-Film Poly Silicon Solar Cells

M. Boostandoost; U. Kerst; C. Boit

ISTFA 2010; 158-162https://doi.org/10.31399/asm.cp.istfa2010p0158

View Articletitled, Activation Energy Analysis of Dark and Laser Illuminated I-V Characteristics of Thin-Film Poly Silicon Solar Cells

System Level Analysis

Application of Lock-in Thermography on PCB for Fault Localization and Validation of Failure Mechanism Due to External Discrete Component Variation

William Ng; Kevin Weaver; Zachary Gemmill; Herve Deslandes; Rudolf Schlangen

ISTFA 2010; 191-195https://doi.org/10.31399/asm.cp.istfa2010p0191

View Articletitled, Application of Lock-in Thermography on PCB for Fault Localization and Validation of Failure Mechanism Due to External Discrete Component Variation

System Level FA on Transmission Line Issues

Nicholas Konkol

ISTFA 2010; 196-201https://doi.org/10.31399/asm.cp.istfa2010p0196

View Articletitled, System Level FA on Transmission Line Issues

Fault Localization of Power-Ground Short via Signal Injection and Oscilloscope Technique

Binh Nguyen

ISTFA 2010; 202-205https://doi.org/10.31399/asm.cp.istfa2010p0202

View Articletitled, Fault Localization of Power-Ground Short via Signal Injection and Oscilloscope Technique

Photon Based Techniques

Product Debug: Speed Problem Related to Unexpected RC Delay

J.G. van Hassel; F. Zachariasse

ISTFA 2010; 206-210https://doi.org/10.31399/asm.cp.istfa2010p0206

View Articletitled, Product Debug: Speed Problem Related to Unexpected RC Delay

Timing Characterization of a Tester Operated Integrated Circuit by Continuous and Pulsed Laser Stimulation

Tuba Kiyan; Christof Brillert; Christian Boit

ISTFA 2010; 211-216https://doi.org/10.31399/asm.cp.istfa2010p0211

View Articletitled, Timing Characterization of a Tester Operated Integrated Circuit by Continuous and Pulsed Laser Stimulation

Dynamic Power Analysis under Laser Stimulation: A New Dynamic Laser Simulation Approach

A. Deyine; P. Perdu; K. Sanchez; J.C. Courrège; Dean Lewis

ISTFA 2010; 217-223https://doi.org/10.31399/asm.cp.istfa2010p0217

View Articletitled, Dynamic Power Analysis under Laser Stimulation: A New Dynamic Laser Simulation Approach

Two-Photon Absorption Laser Assisted Device Alteration Using 1340nm CW Laser: Critical Timing Fault Isolation & Localization for 32nm MPU and Beyond

Baohua Niu; Pat Pardy; Joe Davis; Mel Ortega; Travis Eiles

ISTFA 2010; 224-230https://doi.org/10.31399/asm.cp.istfa2010p0224

View Articletitled, Two-Photon Absorption Laser Assisted Device Alteration Using 1340nm CW Laser: Critical Timing Fault Isolation & Localization for 32nm MPU and Beyond

Differential and Lock-in Imaging of Dynamic Photon Emission and Applications in Failure Analysis

Zhongling Qian; Christof Brillert; Christian Burmer; Yoshiyuki Yokoyama

ISTFA 2010; 373-377https://doi.org/10.31399/asm.cp.istfa2010p0373

View Articletitled, Differential and Lock-in Imaging of Dynamic Photon Emission and Applications in Failure Analysis

Application of Lock-in Thermography for Backside Failure Localization Using Solid Immersion Lenses

Christian Schmidt; Christian Große; Frank Altmann; Jürgen Schulz; Alexander Seibt

ISTFA 2010; 378-384https://doi.org/10.31399/asm.cp.istfa2010p0378

View Articletitled, Application of Lock-in Thermography for Backside Failure Localization Using Solid Immersion Lenses

Combining Time Resolved Emission and Analog Simulation for Fault Localization

Christian Burmer; Fabian Hopsch; Wolfgang Vermeiren

ISTFA 2010; 384-388https://doi.org/10.31399/asm.cp.istfa2010p0384

View Articletitled, Combining Time Resolved Emission and Analog Simulation for Fault Localization

Developing a Chemistry-Assisted Focused Ion Beam Process for ‘On-Demand’ Solid Immersion Lenses in Silicon

P. Scholz; U. Kerst; C. Boit; T. Kujawa; T. Lundquist

ISTFA 2010; 389-392https://doi.org/10.31399/asm.cp.istfa2010p0389

View Articletitled, Developing a Chemistry-Assisted Focused Ion Beam Process for ‘On-Demand’ Solid Immersion Lenses in Silicon

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

M. Bouya; D. Carisetti; J.C. Clement; N. Malbert; N. Labat; P. Perdu

ISTFA 2010; 393-397https://doi.org/10.31399/asm.cp.istfa2010p0393

View Articletitled, Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

Poster Session

Failure Analysis Power Cycling Tool – FAPCT

Yi Yun Chua

ISTFA 2010; 231-232https://doi.org/10.31399/asm.cp.istfa2010p0231

View Articletitled, Failure Analysis Power Cycling Tool – FAPCT

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

Kuo Hsiung Chen; Wen Sheng Wu; Yu Hsiang Shu; Jian Chan Lin

ISTFA 2010; 233-235https://doi.org/10.31399/asm.cp.istfa2010p0233

View Articletitled, Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

Using Nano-Probing Technique to Clarify Nickel Silicide beyond Process Window Causing Device Failure

Jian-Chang Lin; Wen-Sheng Wu

ISTFA 2010; 236-238https://doi.org/10.31399/asm.cp.istfa2010p0236

View Articletitled, Using Nano-Probing Technique to Clarify Nickel Silicide beyond Process Window Causing Device Failure

Fault Isolation on High Resistance Failure of 45nm ET Via Chains Using Combined Technique of SEM PVC and Nanoprobing

P.K. Tan; Z.H. Mai; Y.W. Goh; L. Zhu; S.L. Toh; Q. Deng; R. He; H. Tan; H.L. Li; Q.F. Wang; Y.Z. Ma; W.Y. Lee; G.R. Low; Jeffrey Lam

ISTFA 2010; 239-242https://doi.org/10.31399/asm.cp.istfa2010p0239

View Articletitled, Fault Isolation on High Resistance Failure of 45nm ET Via Chains Using Combined Technique of SEM PVC and Nanoprobing

Detecting Internal “ESD-Like” Damage on CMOS Gates

M. Gores; H. Dicken

ISTFA 2010; 243-248https://doi.org/10.31399/asm.cp.istfa2010p0243

View Articletitled, Detecting Internal “ESD-Like” Damage on CMOS Gates

Design Rule of Microchip Al Bond Pad and Optimization of Bonding Process in Wafer Fabrication

Hua Younan; Nistala Ramesh Rao; Ang Ghim Boon; Chen Shuting

ISTFA 2010; 249-253https://doi.org/10.31399/asm.cp.istfa2010p0249

View Articletitled, Design Rule of Microchip Al Bond Pad and Optimization of Bonding Process in Wafer Fabrication

Backside Infrared Imaging Using Improved Refraction-Assisted Illumination Methods

Terence Yeoh; Stephen LaLumondiere; Neil Ives; Martin Leung

ISTFA 2010; 254-256https://doi.org/10.31399/asm.cp.istfa2010p0254

View Articletitled, Backside Infrared Imaging Using Improved Refraction-Assisted Illumination Methods

The Novel Dopant Profile Inspection Methodology by FIB

Po Fu Chou; Li Ming Lu

ISTFA 2010; 257-260https://doi.org/10.31399/asm.cp.istfa2010p0257

View Articletitled, The Novel Dopant Profile Inspection Methodology by FIB

Design Diagnosis with E-Beam Probing to Improve Reliability Issue Due to Competitive Signal Error

T.C. Chuang; C.M. Shen; L.F. Wen; S.C. Lin; C.M. Huang; Jon C. Lee

ISTFA 2010; 261-264https://doi.org/10.31399/asm.cp.istfa2010p0261

View Articletitled, Design Diagnosis with E-Beam Probing to Improve Reliability Issue Due to Competitive Signal Error

Application to Non Destructive Physical Analysis Method Using X-ray CT Imaging

Akira Mizoguchi; Minoru Sugawara; Masahide Nakamura; Koichiro Takeuchi

ISTFA 2010; 265-270https://doi.org/10.31399/asm.cp.istfa2010p0265

View Articletitled, Application to Non Destructive Physical Analysis Method Using X-ray CT Imaging

Fundamental Study of Al Pad Grain Size Measurement and Its Effectiveness

Yaobin Zhao; Haibo Dai; Baolin Gao; Linfeng Wu; Sanan Liang; Chorng Niou; Qiang Guo

ISTFA 2010; 271-274https://doi.org/10.31399/asm.cp.istfa2010p0271

View Articletitled, Fundamental Study of Al Pad Grain Size Measurement and Its Effectiveness

Sensors, Discretes, and Optoelectronic Devices

Characterization of Green and Ultraviolet LEDs by Laser-Based FA Techniques

M. A. Miller; E. I. Cole, Jr.; P. Tangyunyong

ISTFA 2010; 275-280https://doi.org/10.31399/asm.cp.istfa2010p0275

View Articletitled, Characterization of Green and Ultraviolet LEDs by Laser-Based FA Techniques

Advanced Laser Preparation of Microsystems for Further FIB Processing

Juergen Walter; Stefan Martens; Walter Mack

ISTFA 2010; 281-284https://doi.org/10.31399/asm.cp.istfa2010p0281

View Articletitled, Advanced Laser Preparation of Microsystems for Further FIB Processing

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

Zixiao Pan; Wei Wei; Fuhe Li

ISTFA 2010; 285-289https://doi.org/10.31399/asm.cp.istfa2010p0285

View Articletitled, Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

A Novel Non-Destructive Approach to Deprocess the Sealing Cap from MEMS Device for Failure Analysis

Hsien-Wen Liu; King-Ting Chiang; Tao-Chi Liu; Ming-Lun Chang; Jandel Lin

ISTFA 2010; 290-296https://doi.org/10.31399/asm.cp.istfa2010p0290

View Articletitled, A Novel Non-Destructive Approach to Deprocess the Sealing Cap from MEMS Device for Failure Analysis

A Novel Technique for Localization of Low Level Leakage in Integrated Circuits

A. Chiang; H. Wu; H. Nguyen; W. Pratchayakun; P. Le

ISTFA 2010; 297-300https://doi.org/10.31399/asm.cp.istfa2010p0297

View Articletitled, A Novel Technique for Localization of Low Level Leakage in Integrated Circuits

Test, Diagnostics, and Yield Enhancement

Systematic Defect Identification through Layout Snippet Clustering

Wing Chiu Tam; Osei Poku; R. D. (Shawn) Blanton

ISTFA 2010; 320-329https://doi.org/10.31399/asm.cp.istfa2010p0320

View Articletitled, Systematic Defect Identification through Layout Snippet Clustering

High Volume Scan FA for Yield Enhancement at the 90nm Node

Ryan Ross; Gil Garteiz

ISTFA 2010; 330-331https://doi.org/10.31399/asm.cp.istfa2010p0330

View Articletitled, High Volume Scan FA for Yield Enhancement at the 90nm Node

Tester-Driven Dynamic Laser Stimulation for Hard Functional Failure

S.H. Goh; Y.H. Chan; F. Zheng; H. Tan; J.W. Ting; Robin Chen; Z.H. Mai; Jeffrey Lam; L.C. Hsia; C.M. Chua; J.C.H. Phang

ISTFA 2010; 332-337https://doi.org/10.31399/asm.cp.istfa2010p0332

View Articletitled, Tester-Driven Dynamic Laser Stimulation for Hard Functional Failure

Leveraging the Power Grid for Localizing Trojans and Defects

Jim Plusquellic; Dhruva Acharyya

ISTFA 2010; 338-347https://doi.org/10.31399/asm.cp.istfa2010p0338

View Articletitled, Leveraging the Power Grid for Localizing Trojans and Defects

Circuit Edit

Success! > 90% Yield for 65nm/40nm Full-Thickness Backside Circuit Edit

David W. Niles; Ronald W. Kee

ISTFA 2010; 348-358https://doi.org/10.31399/asm.cp.istfa2010p0348

View Articletitled, Success! > 90% Yield for 65nm/40nm Full-Thickness Backside Circuit Edit

Innovative Methodologies of Circuit Edit on Wafer-Level Chip Scale Package (WLCSP) Devices

Shih-Ting Liu; Tao-Chi Liu; Ming-Lun Chang; Jandel Lin

ISTFA 2010; 359-363https://doi.org/10.31399/asm.cp.istfa2010p0359

View Articletitled, Innovative Methodologies of Circuit Edit on Wafer-Level Chip Scale Package (WLCSP) Devices

Pulsed Spot Milling and Deposition to Enable Next Generation Circuit Edit Via Development

Dane Scott; Ted Lundquist; Tahir Malik

ISTFA 2010; 426-430https://doi.org/10.31399/asm.cp.istfa2010p0426

View Articletitled, Pulsed Spot Milling and Deposition to Enable Next Generation Circuit Edit Via Development

Novel Circuit Edit Solution for Bulk Copper Milling

Tahir Malik; Rajesh Jain; Ferdi Meijer; Tim Velthof

ISTFA 2010; 431-439https://doi.org/10.31399/asm.cp.istfa2010p0431

View Articletitled, Novel Circuit Edit Solution for Bulk Copper Milling

Fast Mixed Field Material Removal Using New Dielectric Etch Solution

Vladimir V. Makarov; Leo Krasnobayev; James Hahn

ISTFA 2010; 440-443https://doi.org/10.31399/asm.cp.istfa2010p0440

View Articletitled, Fast Mixed Field Material Removal Using New Dielectric Etch Solution

Detecting and Preventing Counterfeit Microelectronics

Counterfeit Parts Recognition and Detection for Failure Analysts

Katherine V. Whittington

ISTFA 2010; 364-368https://doi.org/10.31399/asm.cp.istfa2010p0364

View Articletitled, Counterfeit Parts Recognition and Detection for Failure Analysts

Case Studies of Counterfeit Part Detection in Assembled Products

Daniel P. Hartgerink

ISTFA 2010; 369-372https://doi.org/10.31399/asm.cp.istfa2010p0369

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Nanoprobing

Characterizing Gate Disturb Embedded Flash Memory Cells by Atomic Force Probing

M. Hoffmann; C. Nowak; A. Haase; S. Eckl

ISTFA 2010; 398-402https://doi.org/10.31399/asm.cp.istfa2010p0398

View Articletitled, Characterizing Gate Disturb Embedded Flash Memory Cells by Atomic Force Probing

Identification of a Non-LDD Induced Vt Shift Failure Mechanism via Nano-Probe Characterization

Randal Mulder; Yuk Tsang

ISTFA 2010; 403-408https://doi.org/10.31399/asm.cp.istfa2010p0403

View Articletitled, Identification of a Non-LDD Induced Vt Shift Failure Mechanism via Nano-Probe Characterization

Characterization of a Resistive Path to a Gate Node Using Tunneling Current Measurements

Clifford Howard; Sam Subramanian; Kent Erington; Randall Mulder; Yuk Tsang; John Bartlett

ISTFA 2010; 409-412https://doi.org/10.31399/asm.cp.istfa2010p0409

View Articletitled, Characterization of a Resistive Path to a Gate Node Using Tunneling Current Measurements

Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

K. Dickson; G. Lange; K. Erington; J. Ybarra

ISTFA 2010; 413-422https://doi.org/10.31399/asm.cp.istfa2010p0413

View Articletitled, Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

Frequency Sensitive Soft Fails in SRAM Arrays

Sweta Pendyala; Terence Kane; Michael Tenney; Richard Oldrey; Manuel Villalobos; John Sylvestri

ISTFA 2010; 423-425https://doi.org/10.31399/asm.cp.istfa2010p0423

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Volume Information

Credits

ISTFA 2010; iii-vihttps://doi.org/10.31399/asm.cp.istfa2010fm01

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