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ISTFA 2008

November 2–6, 2008

Portland, Oregon, USA

Conference Sponsors:

Electronic Device Failure Analysis Society
ASM International

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis

Issue navigation

IPFA 07 Best Paper
Advanced Techniques
Package Level Analysis
Failure Analysis Process
Package Level Analysis
Circuit Edit
Sample Preparation
Photon Based Techniques
Scanning Probe Microscopy
Photon Based Techniques
Poster Session
System Level Analysis
Sample Preparation
Fault Isolation and Testing
Photon Based Techniques
Nanoprobing
Yield Enhancement
Failure Analysis Process
In-Line Metrology and Inspection
Volume Information

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis

IPFA 07 Best Paper

Effect of Refractive Solid Immersion Lens Parameters on the Enhancement of Laser Induced Fault Localization Techniques

S.H. Goh; A.C.T. Quah; C.J.R. Sheppard; J.C.H. Phang; C.M. Chua; L.S. Koh

ISTFA 2008; 1-6doi:https://doi.org/10.31399/asm.cp.istfa2008p0001

Advanced Techniques

High Current Focused Ion Beam Instrument for Destructive Physical Analysis Applications

Paul Tesch; Noel Smith; Noel Martin; Doug Kinion

ISTFA 2008; 7-13doi:https://doi.org/10.31399/asm.cp.istfa2008p0007

Recent Developments in TEM Applications for the IC Industry

L. F. Fu; Y. C. Wang; B. Jiang; F. Shen; M. Strauss; B. Van Leer; C. Senowitz; A. Buxbaum

ISTFA 2008; 14-20doi:https://doi.org/10.31399/asm.cp.istfa2008p0014

Automated Serial-Section Polishing Tomography

J.A. Hunt; P. Prasad; E. Raz

ISTFA 2008; 21-24doi:https://doi.org/10.31399/asm.cp.istfa2008p0021

Applications of Scanning Near-Field Photon Emission Microscopy

D.V. Isakov; B.W.M. Tan; J.C.H. Phang; Y.C. Yeo; A.A.B. Tio; Y. Zhang; T. Geinzer; L.J. Balk

ISTFA 2008; 25-29doi:https://doi.org/10.31399/asm.cp.istfa2008p0025

Package Level Analysis

New Developments in High-Resolution X-ray Computed Tomography for Non-Destructive Defect Detection in Next Generation Package Technologies

Mario Pacheco; Deepak Goyal

ISTFA 2008; 30-35doi:https://doi.org/10.31399/asm.cp.istfa2008p0030

Flip-Chip Bump Interface Failure Mechanisms In Plastic BGA Packages and Failure Analysis Process Flow

Zhaofeng Wang, Sr.

ISTFA 2008; 36-42doi:https://doi.org/10.31399/asm.cp.istfa2008p0036

PCB Pad Cratering – Characterization Techniques and Challenges

Satish Parupalli; Keith Newman; Mudasir Ahmad

ISTFA 2008; 43-48doi:https://doi.org/10.31399/asm.cp.istfa2008p0043

Stitch-Bond-Shearing in Optoelectronic Devices, Caused by Lead-Free-Wave-Soldering – Do We Need Improved Wire-Bonding Methods?

Peter Jacob; Michael Rütsch

ISTFA 2008; 49-52doi:https://doi.org/10.31399/asm.cp.istfa2008p0049

Lead-Free Solder/Gold Metallization Interdiffusion in Electronic Interconnects – Challenges and their Control

Nausha Asrar

ISTFA 2008; 53-58doi:https://doi.org/10.31399/asm.cp.istfa2008p0053

Thick Film Resistor Failures

Anshul Shrivastava; Ahmed Amin; Bhanu Sood; Michael Azarian; Michael Pecht; Michael Zagami

ISTFA 2008; 59-64doi:https://doi.org/10.31399/asm.cp.istfa2008p0059

Non Invasive Failure Analysis of Passive Electronic Devices in Wireless Modules Using X-ray Micro Tomography (MicroCT)

Tyler Pendleton; Luke Hunter; S. H. Lau

ISTFA 2008; 92-98doi:https://doi.org/10.31399/asm.cp.istfa2008p0092

Scanning Acoustic Microscopy for Solder Joint Failure Analysis and Design Improvements

Ramesh Varma; Jeffrey Bartolovitch; Victor Brzozowski; Carl Sokolowski

ISTFA 2008; 99-101doi:https://doi.org/10.31399/asm.cp.istfa2008p0099

Lock-In-Thermography for 3-Dimensional Localization of Electrical Defects inside Complex Packaged Devices

C. Schmidt; F. Altmann; C. Grosse; A. Lindner; V. Gottschalk

ISTFA 2008; 102-107doi:https://doi.org/10.31399/asm.cp.istfa2008p0102

An Analytical Technique to Assess the Risk of Laser Damage to Encapsulated Integrated Circuits during Package Laser Marking

Joseph Patterson; Cliff Schuring

ISTFA 2008; 108-111doi:https://doi.org/10.31399/asm.cp.istfa2008p0108

Techniques for Identification of Silver Migration in Plastic Encapsulated Devices Assembled with Molding Compound Containing Red Phosphorus Flame Retardant Material

Ronald R. Hylton

ISTFA 2008; 112-120doi:https://doi.org/10.31399/asm.cp.istfa2008p0112

Emerging Techniques for the Characterization of Nano-Mechanical Properties of Integrated Circuit Components

Nicholas Randall; Rahul Premachandran Nair

ISTFA 2008; 121-127doi:https://doi.org/10.31399/asm.cp.istfa2008p0121

Failure Analysis Process

Active Voltage Contrast and Seebeck Effect Imaging as Complementary Techniques for Localization of Resistive Interconnections

I. Österreicher; U. Rossberg; S. Eckl

ISTFA 2008; 65-69doi:https://doi.org/10.31399/asm.cp.istfa2008p0065

A Logical Problem Solving Process for High Via Resistance Root Cause Analysis

K. Li; P. Liu; J. Teong; M. Lee; H. L. Yap

ISTFA 2008; 70-74doi:https://doi.org/10.31399/asm.cp.istfa2008p0070

Vdd Leakage Analysis by a Combination of Various Failure Analysis Techniques

Z. G. Song; S. B. Ippolito; P. J. McGinnis; A. Shore; B. Paulucci; T. Kane; M. P. Tenney; F. G. Trudeau; A. W. Kozaczka

ISTFA 2008; 75-78doi:https://doi.org/10.31399/asm.cp.istfa2008p0075

Physical Failure Analysis Techniques and Studies on Vertical Short Issue of 65nm Devices

P.K. Tan; Z.H. Mai; S.L. Toh; E. Hendarto; Q. Deng; Y.W. Goh; J.L. Cai; Y.Z. Ma; H.B. Lin; L. Zhu; J. Yu; H.L. Li; Q.F. Wang; R. He; H. Tan; J. Lam

ISTFA 2008; 79-84doi:https://doi.org/10.31399/asm.cp.istfa2008p0079

Fast Root Cause Analysis Based on Electrical Defect Localization

Michael Schmidt; Larry Dworkin; Christopher Hess; Michele Squcciarini; Shia Yu; Jonathan Burrows

ISTFA 2008; 85-87doi:https://doi.org/10.31399/asm.cp.istfa2008p0085

Failure Analysis for Gate Oxide Breakdown

Xianfeng Chen; Ming Li; Qiang Guo; Kary Chien; YanBo Gao

ISTFA 2008; 88-91doi:https://doi.org/10.31399/asm.cp.istfa2008p0088

A Procedure for Identifying the Failure Mechanism Responsible for a Pin-To-Pin Short Within Plastic Mold Compound Integrated Circuit Packages

Carl Nail; Jesus Rocha; Lawrence Wong

ISTFA 2008; 476-480doi:https://doi.org/10.31399/asm.cp.istfa2008p0476

Mis-identified Failures in FETs

Mark Gores

ISTFA 2008; 481-484doi:https://doi.org/10.31399/asm.cp.istfa2008p0481

Frontside and Backside Analysis of Surface ESD

Dermot Daly; Linda Grogan; Fergal Keating

ISTFA 2008; 485-489doi:https://doi.org/10.31399/asm.cp.istfa2008p0485

Intermittent Failures, Challenges and Strategies Involved with Finding Root Cause

Nicholas Konkol

ISTFA 2008; 490-492doi:https://doi.org/10.31399/asm.cp.istfa2008p0490

Transient Latch-Up Analysis of Power Control Device with Combined Light Emission and Backside Transient Interferometric Mapping Methods

M. Heer; D. Pogany; M. Street; I. Smith; F. Riedlberger; D. Bonfert; H. A. Gieser

ISTFA 2008; 493-498doi:https://doi.org/10.31399/asm.cp.istfa2008p0493

Circuit Edit

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

Steven B. Herschbein; Hyoung H. Kang; Scott L. Jansen; Andrew S. Dalton

ISTFA 2008; 128-132doi:https://doi.org/10.31399/asm.cp.istfa2008p0128

An Analysis of Tungsten FIB-Fabricated Via Resistance

David W. Niles; Jay Meyer; Ronald W. Kee; Michael DiBattista

ISTFA 2008; 133-140doi:https://doi.org/10.31399/asm.cp.istfa2008p0133

Backside Circuit Edit on Full-Thickness Silicon Devices

Chad Rue; Steven Herschbein; Carmelo Scrudato

ISTFA 2008; 141-150doi:https://doi.org/10.31399/asm.cp.istfa2008p0141

Insulator Deposition for Through Conductor Editing

Chris Richardson; Mark Martin; Tahir Malik; Jerrold P. Barone

ISTFA 2008; 151-156doi:https://doi.org/10.31399/asm.cp.istfa2008p0151

Creation of Solid Immersion Lenses in Bulk Silicon Using Focused Ion Beam Backside Editing Techniques

P. Scholz; U. Kerst; C. Boit; C.-C. Tsao; T. Lundquist

ISTFA 2008; 157-162doi:https://doi.org/10.31399/asm.cp.istfa2008p0157

Sample Preparation

S/D LDD Junction Stain/Delineation by Electrochemical Displacement with Illumination

Re-Long Chiu; Tammy Chen; Shannon Chen

ISTFA 2008; 163-167doi:https://doi.org/10.31399/asm.cp.istfa2008p0163

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

Hyoung H. Kang; Michael A. Gribelyuk; Oliver D. Patterson; Steven B. Herschbein; Corey Senowitz

ISTFA 2008; 168-171doi:https://doi.org/10.31399/asm.cp.istfa2008p0168

Embedded Gold Markers for Improved TEM/STEM Tomography Reconstruction

Jian-Shing Luo; Chia-Chi Huang; Jeremy D. Russell

ISTFA 2008; 172-179doi:https://doi.org/10.31399/asm.cp.istfa2008p0172

Single Die 'Hands-Free' Layer-by-Layer Mechanical Deprocessing for Failure Analysis or Reverse Engineering

Tony Moor; Eli Malyanker; Efrat Raz-Moyal

ISTFA 2008; 363-367doi:https://doi.org/10.31399/asm.cp.istfa2008p0363

Characterization and Failure Analysis of Wafer Bonded Devices and Unfilled Through-Silicon-Vias (TSVs)

C. Cassidy; J. Kraft; G. Koppitsch; E. Brandlhofer; M. Steiner; F. Schrank; D. Erwin; E. Raz-Moyal

ISTFA 2008; 368-374doi:https://doi.org/10.31399/asm.cp.istfa2008p0368

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

P. Schwindenhammer; H. Murray; P. Descamps; P. Poirier

ISTFA 2008; 375-382doi:https://doi.org/10.31399/asm.cp.istfa2008p0375

Photon Based Techniques

Timing Sensitivity Analysis of Logical Nodes in Scan Design Integrated Circuits by Pulsed Diode Laser Stimulation

T. Kiyan; C. Boit; C. Brillert

ISTFA 2008; 180-187doi:https://doi.org/10.31399/asm.cp.istfa2008p0180

Dual Port RAM MBIST Failure Analysis Using Time Resolved Dynamic Laser Stimulation

Jonathan Shaw; Christopher McMahon; Yin Shyang Ng; Félix Beaudoi

ISTFA 2008; 188-192doi:https://doi.org/10.31399/asm.cp.istfa2008p0188

Mixed Frequency Detection of Thermal Laser Stimulation (MF-TLS) and Its Application in Failure Analysis

Zhongling Qian; Christof Brillert; Christian Burmer

ISTFA 2008; 193-197doi:https://doi.org/10.31399/asm.cp.istfa2008p0193

Differentiation between Artifacts and True Defects in 45 nm BEOL Structures in M-TLS Technique

A. Reverdy; M. de la Bardonnie; P. Poirier; H. Murray; B. Domengès; P. Perdu

ISTFA 2008; 198-203doi:https://doi.org/10.31399/asm.cp.istfa2008p0198

Backside Failure Analysis by Electroluminescence on Microwave Devices

M. Bouya; D. Carisetti; P. Delaqueze; J.C. Clement; N. Malbert; N. Labat; P. Perdu

ISTFA 2008; 214-219doi:https://doi.org/10.31399/asm.cp.istfa2008p0214

Photon Emission Spectral Signatures of AlGaN/GaN HEMT for Functional and Reliability Analysis

Arkadiusz Glowacki; Christian Boit; Richard Lossy; Joachim Würfl

ISTFA 2008; 220-226doi:https://doi.org/10.31399/asm.cp.istfa2008p0220

Laser Scanning Localization Technique for Fast Analysis of High Speed DRAM Devices

Martin Versen; Achim Schramm; Jan Schnepp; Sascha Hoch; Tapan Vikas; Dorina Diaconescu

ISTFA 2008; 227-232doi:https://doi.org/10.31399/asm.cp.istfa2008p0227

Novel Application of the OBIRCh Amplifier for Timing Failure Localization

M. Sienkiewicz; P. Perdu; S. Brule; A. Firiti; O. Crepel

ISTFA 2008; 233-237doi:https://doi.org/10.31399/asm.cp.istfa2008p0233

Combining Refractive Solid Immersion Lens and Pulsed Laser Induced Techniques for Effective Defect Localization on Microprocessors

A.C.T. Quah; S.H. Goh; V.K. Ravikumar; S.L. Phoa; V. Narang; J.M. Chin; C.M. Chua; J.C.H. Phang

ISTFA 2008; 402-406doi:https://doi.org/10.31399/asm.cp.istfa2008p0402

Evaluating PICA Capability for Future Low Voltage SOI Chips

Franco Stellari; Peilin Song; Jim Vickers; Chris Shaw; Steven Kasapi; Radu Ispasoiu

ISTFA 2008; 407-416doi:https://doi.org/10.31399/asm.cp.istfa2008p0407

Scanning Probe Microscopy

Calibration of Nanoprobe Capacitance-Voltage Spectroscopy (NCVS)

Terence Kane; Michael P. Tenney; Andrew Erickson; Peter Harris

ISTFA 2008; 204-208doi:https://doi.org/10.31399/asm.cp.istfa2008p0204

Analysis of Deep Trench Node Leakage Depth by Applying Current Imaging Technique at Silicon Level

S. Doering; M. Seitz; U. Zimmermann; P. Rodger; W. Werner

ISTFA 2008; 209-213doi:https://doi.org/10.31399/asm.cp.istfa2008p0209

Poster Session

Novel Sample Preparation Technique for Backside Analysis of Singulated Die

S. Elliott; M. LaPierre; P. Plourde

ISTFA 2008; 238-241doi:https://doi.org/10.31399/asm.cp.istfa2008p0238

Innovative Method & Use of UV Technologies for Dye Penetrant Sample Preparation

Todd R. McDonald

ISTFA 2008; 242-244doi:https://doi.org/10.31399/asm.cp.istfa2008p0242

The Failure Analysis of Specific Source-to-Drain Dislocation and Case Study

C. H. Wang; S.W. Lai; C.Y. Wu; B.T. Chen; J.Y. Chiou; J.H. Chou

ISTFA 2008; 245-248doi:https://doi.org/10.31399/asm.cp.istfa2008p0245

Next Generation Laser Voltage Probing

Yin S Ng; William Lo; Kenneth Wilsher

ISTFA 2008; 249-255doi:https://doi.org/10.31399/asm.cp.istfa2008p0249

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

Hung-Sung Lin; Mong-Sheng Wu

ISTFA 2008; 256-259doi:https://doi.org/10.31399/asm.cp.istfa2008p0256

Applications of C-AFM and CBED Techniques to the Characterization of Substrate Dislocations Causing SRAM Soft Single-Column Failure Contained in a Wafer with (001) Plane/[100] Notch

Hung-Sung Lin; Tung-Hung Chen; Wen-Cheng Shu

ISTFA 2008; 260-264doi:https://doi.org/10.31399/asm.cp.istfa2008p0260

Electroluminescence Analysis by Precise Tilt Polish Technique of Edge-Emitting Laser Diode

Hiroyuki Ichikawa; Kouichi Sasaki; Kotaro Hamada; Akira Yamaguchi

ISTFA 2008; 265-268doi:https://doi.org/10.31399/asm.cp.istfa2008p0265

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

Chi-Lin Huang; Yu Hsiang Shu

ISTFA 2008; 269-272doi:https://doi.org/10.31399/asm.cp.istfa2008p0269

Case Study of High Temperature Failure Analyses Using an On-Chip “Heater”

Fubin Zhang; Corey Lewis; Tim Duryea

ISTFA 2008; 273-276doi:https://doi.org/10.31399/asm.cp.istfa2008p0273

Development of PECS Application for Sample Preparation

Xianfeng Chen; Ming Li; Qiang Guo; W.T. Kary Chien

ISTFA 2008; 277-279doi:https://doi.org/10.31399/asm.cp.istfa2008p0277

Automated Sample Preparation of Packaged Microelectronics for FESEM

R. R. Cerchiara; P. E. Fischione; M. F. Boccabella; A. C. Robins

ISTFA 2008; 280-284doi:https://doi.org/10.31399/asm.cp.istfa2008p0280

Studies of Fluorine-Induced Corrosion and Defects on Microchip Al Bondpads and Elimination Solutions

Hua Younan; Nistala Ramesh Rao; Teong Jennifer

ISTFA 2008; 285-290doi:https://doi.org/10.31399/asm.cp.istfa2008p0285

Optimization of SEM Analytical Conditions for Low K and Ultra Low K Dielectric Materials

Liu Binghai; Mo Zhiqiang; Hua Younan; Teong Jennifer

ISTFA 2008; 291-293doi:https://doi.org/10.31399/asm.cp.istfa2008p0291

Using Cross-Triggering in Oscilloscope for Debugging Multiphase Converter Circuit of Personal Computer (PC) Motherboard

Binh Nguyen; Orlando Diaz

ISTFA 2008; 294-296doi:https://doi.org/10.31399/asm.cp.istfa2008p0294

Doping Profile Measurements in a 65-nm Commercial Product Using Atom Probe Tomography

Lev Klibanov; Dick James; Dieter Isheim

ISTFA 2008; 297-300doi:https://doi.org/10.31399/asm.cp.istfa2008p0297

Failure Analysis of Nitride-Trapping Memory Cell Failures

Wen-Rong Chen; Yu-Ju Chen; I-Cheng Chang; Hsin-Hsu Chiang; Li-Kuang Kuo; Shaw Yin; Chih-Yuan Lu

ISTFA 2008; 301-304doi:https://doi.org/10.31399/asm.cp.istfa2008p0301

Advanced Methodologies for Backside Circuit Edit

E. O’Donnell; D. Scott; T. Malik; R. Jain; T. Lundquist; R. Schlangen; U. Kerst; C. Boit

ISTFA 2008; 305-314doi:https://doi.org/10.31399/asm.cp.istfa2008p0305

Physical Failure Analysis Techniques Using 3D Rotation Imaging Method by STEM

Tae-Sun Back; Jong-Hyeop Kim; Soon-Ju Lee; Jin-Woo Jung; Te-O Jung; Ho-Joung Kim; Soun-Young Lee

ISTFA 2008; 315-316doi:https://doi.org/10.31399/asm.cp.istfa2008p0315

High Precision Ion Beam Milling with Time of Flight Compensation

Theresa Holtermann; Anthony Graupera; Steve Rosenberg; Michael DiBattista

ISTFA 2008; 317-319doi:https://doi.org/10.31399/asm.cp.istfa2008p0317

Applications of In-situ Sample Preparation and Modeling of SEM-STEM Imaging

R.J. Young; A. Buxbaum; B. Peterson; R. Schampers

ISTFA 2008; 320-327doi:https://doi.org/10.31399/asm.cp.istfa2008p0320

Sample Preparation Technique for Bond Pad IMD (Inter-Metal Dielectric) Damage Observation

Y. S. Huan; Y. L. Kuo; Y.T. Lin; Jeff Chen; K.Y. Lee

ISTFA 2008; 328-331doi:https://doi.org/10.31399/asm.cp.istfa2008p0328

System Level Analysis

Dynamic Laser Stimulation Technique for Device Qualification Process

A. Deyine-Barth; P. Perdu; G. Benetti; K. Sanchez; F. Battistella; D. Lewis

ISTFA 2008; 332-338doi:https://doi.org/10.31399/asm.cp.istfa2008p0332

Lead Frame Metal Migration in an Encapsulated IC Package

William Eslinger

ISTFA 2008; 339-343doi:https://doi.org/10.31399/asm.cp.istfa2008p0339

Latent Flash Single Bit and Multiple Bits Systematic Approach to Failure Analysis

Hoang-Yen To; Dat Nguyen; Clyde Dunn; Detric Davis

ISTFA 2008; 344-348doi:https://doi.org/10.31399/asm.cp.istfa2008p0344

Reliability for Pure CMOS One-Time Programmable Memory Using Gate-Oxide Anti-Fuse (eFuse)

Nobuyuki Wakai

ISTFA 2008; 349-353doi:https://doi.org/10.31399/asm.cp.istfa2008p0349

Laser Failure Isolation Techniques Demonstrated On Test Structures

Frank S. Arnold

ISTFA 2008; 354-362doi:https://doi.org/10.31399/asm.cp.istfa2008p0354

Fault Isolation and Testing

Timing Failure Debug Using Debug-Friendly Scan Patterns and TRE

Christian Burmer; Ruifeng Guo; Wu-Tung Cheng; Xijiang Lin; Brady Benware

ISTFA 2008; 383-389doi:https://doi.org/10.31399/asm.cp.istfa2008p0383

Improving Fault Isolation Using Iterative Diagnosis

Kevin Gearhardt; Chris Schuermyer; Ruifeng Guo

ISTFA 2008; 390-395doi:https://doi.org/10.31399/asm.cp.istfa2008p0390

Deterministic Localization and Analysis of Scan Hold-Time Faults

Jaecheol Hwang; Daegyu Kim; Namsik Seo; Euncheol Lee; Wooseong Choi; Yeongtaek Jeong; J. Orbon; S. Cannon

ISTFA 2008; 396-401doi:https://doi.org/10.31399/asm.cp.istfa2008p0396

Nanoprobing

An Application of a Nanoprobe Technique in the Characterization of Advanced SRAM Devices

Hung-Sung Lin; Chun-Ming Chen

ISTFA 2008; 417-422doi:https://doi.org/10.31399/asm.cp.istfa2008p0417

Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

Suk Min Kim; Jung Ho Lee; Jong Hak Lee; Hyung Ki Kim; Myung Sick Chang; Jung Hoon Lee; Sung Joo Hong

ISTFA 2008; 423-427doi:https://doi.org/10.31399/asm.cp.istfa2008p0423

Low Voltage, Low Current AFP Characterization of Non-Visible Soft Transistor Defects

Randal Mulder; Sam Subramanian; Tony Chrastecky

ISTFA 2008; 428-436doi:https://doi.org/10.31399/asm.cp.istfa2008p0428

Characterization and Analysis of 45nm Node SRAM Standby Leakage

D. E. Albert; Z. G. Song; S. B. Ippolito; L. Fischer; M. P. Tenney

ISTFA 2008; 437-444doi:https://doi.org/10.31399/asm.cp.istfa2008p0437

Investigation on Focused Ion Beam Induced Damage on Nanoscale SRAM by Nanoprobing

E. Hendarto; S.L. Toh; P.K. Tan; Y.W. Goh; J.L. Cai; Y.Z. Ma; Z.H. Mai; J. Lam; J. Sudijono

ISTFA 2008; 445-448doi:https://doi.org/10.31399/asm.cp.istfa2008p0445

Yield Enhancement

Oxidation of TiN ARC Layer as a Reliability Issue for ICs

Martin McVeigh; Avi Raz; Willem J. Kindt; Alfred Gomes; Kar Yee Wong; Tricia Inamine; Thomas J. Bold

ISTFA 2008; 449-458doi:https://doi.org/10.31399/asm.cp.istfa2008p0449

Timing Problems Due to Spacer Bridging in a Sub-100 nm Product

Jan van Hassel

ISTFA 2008; 459-463doi:https://doi.org/10.31399/asm.cp.istfa2008p0459

A Study of Pad Contamination Defect and Removal

K.A. Mohammad; L.J. Liu; S.F. Liew; S.F. Chong; D.G. Lee; S.F. Lee; B.C. Lee

ISTFA 2008; 464-467doi:https://doi.org/10.31399/asm.cp.istfa2008p0464

A Study to Remove Heavy Polymer Remain on Thick Metal (> 3 micron) Sidewall Profile after Metal Etch Solvent Clean Step

S. F. Liew; K. A. Mohammad; L. J. Liu; S.F. Chong; D. G. Lee; S.F. Lee; B.C. Lee

ISTFA 2008; 468-470doi:https://doi.org/10.31399/asm.cp.istfa2008p0468

Yield Enhancement Using a Combination of Wafer Level Failure Analysis and Defect Isolation Software: Case Studies

Pierre Simon; Michel Thétiot; Bernard Picart; Cathy Kardach; Herve Deslandes; Fabien Dudkiewicz; Jean-Philippe Roux

ISTFA 2008; 471-475doi:https://doi.org/10.31399/asm.cp.istfa2008p0471

In-Line Metrology and Inspection

3D STEM Tomography Based Failure Analysis of 45 nm CMOS Devices

Frederic Lorut; Dominique Delille

ISTFA 2008; 499-504doi:https://doi.org/10.31399/asm.cp.istfa2008p0499

Dopant Analysis on Advanced CMOS Technologies

Frank Siegelin; Anja Dübotzky; Bodo Danzfuss; Stephan Schömann

ISTFA 2008; 505-509doi:https://doi.org/10.31399/asm.cp.istfa2008p0505

SEM Si Dopant Contrast Enhancement Using Sample Charging

Yi-Wei Hsieh; Jeremy D. Russell; Pei-Yi Chen

ISTFA 2008; 510-514doi:https://doi.org/10.31399/asm.cp.istfa2008p0510

3-D Image Reconstruction in the Scanning Electron Microscope

William E. Vanderlinde

ISTFA 2008; 515-523doi:https://doi.org/10.31399/asm.cp.istfa2008p0515

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ISTFA 2008; iii-vidoi:https://doi.org/10.31399/asm.cp.istfa2008fm01

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