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ISTFA 1998

November 15–19, 1998

Dallas, Texas, USA

Conference Sponsors:

Electronic Device Failure Analysis Society
ASM International

ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis

Issue navigation

Keynote Presentation
Advanced Techniques
FIB
Military
FIB
ESD
Techniques
Case Histories
Techniques
Case Histories
Testing
Case Histories
Poster Session
Discretes
Techniques
Packaging
Techniques
Backside Analysis
Volume Information

ISTFA 1998: Conference Proceedings from the 24th International Symposium for Testing and Failure Analysis

Keynote Presentation

Breakup Sequence of the TWA Flight 800 Airplane: How it was Determined That an Explosion of the Wing Center Section Fuel Tank Initiated the Breakup

James F. Wildey, II

ISTFA 1998; 3-8https://doi.org/10.31399/asm.cp.istfa1998p0003

View Articletitled, Breakup Sequence of the TWA Flight 800 Airplane: How it was Determined That an Explosion of the Wing Center Section Fuel Tank Initiated the Breakup

Advanced Techniques

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

I. De Wolf; G. Groeseneken; H.E. Maes; M. Bolt; K. Barla; A. Reader; P.J. McNally

ISTFA 1998; 11-15https://doi.org/10.31399/asm.cp.istfa1998p0011

View Articletitled, Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

Microthermal Imaging Based on the Transmission Change of a Thermochromic Dye Film

Hiroshi Ban; Yukio Komine; Tadao Takeda; Shinji Nakamura

ISTFA 1998; 17-23https://doi.org/10.31399/asm.cp.istfa1998p0017

View Articletitled, Microthermal Imaging Based on the Transmission Change of a Thermochromic Dye Film

High Spatial Resolution OBIRCH and OBIC Effects Realized by Near-field Optical Probe in the Analysis of High Resistance 200 nm wide TiSi Line

K. Nikawa; T. Saiki; S. Inoue; M. Ohtsu

ISTFA 1998; 25-29https://doi.org/10.31399/asm.cp.istfa1998p0025

View Articletitled, High Spatial Resolution OBIRCH and OBIC Effects Realized by Near-field Optical Probe in the Analysis of High Resistance 200 nm wide TiSi Line

Advanced Failure Analysis of Deep-Submicron CMOS Device Dopant Profiles Using Scanning Kelvin Probe Microscopy

L. Moszkowicz; P. Kaszuba; J. Slinkman; L. Doezema

ISTFA 1998; 31-39https://doi.org/10.31399/asm.cp.istfa1998p0031

View Articletitled, Advanced Failure Analysis of Deep-Submicron CMOS Device Dopant Profiles Using Scanning Kelvin Probe Microscopy

Scanning Capacitance Microscopy Use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor

Kendall Scott Wills; Hal Edwards; Long Nuygen; Rohini Raghunathan; Charles Todd; Andy Vance

ISTFA 1998; 41-46https://doi.org/10.31399/asm.cp.istfa1998p0041

View Articletitled, Scanning Capacitance Microscopy Use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor

FIB

Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

J. Benbrik; G. Rolland; P. Perdu; B. Benteo; M. Casari; R. Desplats; N. Labat; A. Touboul; Y. Danto

ISTFA 1998; 49-55https://doi.org/10.31399/asm.cp.istfa1998p0049

View Articletitled, Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam

Yong-koo Yoo; Chong-ha Lee; Jung-hwan Lee

ISTFA 1998; 57-66https://doi.org/10.31399/asm.cp.istfa1998p0057

View Articletitled, AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam

Performing Circuit Modification and Debugging Using Focused-Ion-Beam on Multi-Layered C4 Flip-Chip Devices

Susan X. Li

ISTFA 1998; 67-72https://doi.org/10.31399/asm.cp.istfa1998p0067

View Articletitled, Performing Circuit Modification and Debugging Using Focused-Ion-Beam on Multi-Layered C4 Flip-Chip Devices

Focused Ion Beam Application in Solving RFIC Oscillation Problem

S.P. Zhao; H.N. Ma; S.J. Fang; G.P. Goh; J. Wang

ISTFA 1998; 73-76https://doi.org/10.31399/asm.cp.istfa1998p0073

View Articletitled, Focused Ion Beam Application in Solving RFIC Oscillation Problem

In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications

Romain Desplats; Jamel Benbrik; Philippe Perdu; Bruno Benteo; François Marc; Yves Danto

ISTFA 1998; 119-125https://doi.org/10.31399/asm.cp.istfa1998p0119

View Articletitled, In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications

The Challenges of FIB Chip Repair and Debug Assistance in the 0.25μm Copper Interconnect Millennium

S.B. Herschbein; L.S. Fischer; T.L. Kane; M.P. Tenney; A.D. Shore

ISTFA 1998; 127-130https://doi.org/10.31399/asm.cp.istfa1998p0127

View Articletitled, The Challenges of FIB Chip Repair and Debug Assistance in the 0.25μm Copper Interconnect Millennium

A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits

S. Subramanian; P. Schani; E. Widener; P. Liston; J. Moss; V. Soorholtz

ISTFA 1998; 131-135https://doi.org/10.31399/asm.cp.istfa1998p0131

View Articletitled, A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits

Military

The RAC Data Sharing Consortium: Sharing Test, Field and Failure Analysis Data

D. David Dylis

ISTFA 1998; 79-82https://doi.org/10.31399/asm.cp.istfa1998p0079

View Articletitled, The RAC Data Sharing Consortium: Sharing Test, Field and Failure Analysis Data

Failure Analysis of a Qualification Unit Injector for a Satellite Thruster

M. Lipschutz; R. Brannam; T. Nguyentat

ISTFA 1998; 83-91https://doi.org/10.31399/asm.cp.istfa1998p0083

View Articletitled, Failure Analysis of a Qualification Unit Injector for a Satellite Thruster

Preliminary Study of Alternative Material Development of Ballistic Attributes

Dal Sun Kim; Sia. Nemat-Nasser; Yun Seon Kim

ISTFA 1998; 93-97https://doi.org/10.31399/asm.cp.istfa1998p0093

View Articletitled, Preliminary Study of Alternative Material Development of Ballistic Attributes

Metallurgical Examination of a Galled PH 13-8 Mo Stainless Steel Main Rotor Sub-Assembly

Scott M. Grendahl; Marc S. Pepi

ISTFA 1998; 99-108https://doi.org/10.31399/asm.cp.istfa1998p0099

View Articletitled, Metallurgical Examination of a Galled PH 13-8 Mo Stainless Steel Main Rotor Sub-Assembly

Effects of Prior Processing on the Performance of PH 13-8 Mo Stainless Steel

Marc S. Pepi; Scott M. Grendahl

ISTFA 1998; 109-116https://doi.org/10.31399/asm.cp.istfa1998p0109

View Articletitled, Effects of Prior Processing on the Performance of PH 13-8 Mo Stainless Steel

ESD

ESD Induced Failures in Cermet Trim Potentiometers

George H. Ebel

ISTFA 1998; 139-142https://doi.org/10.31399/asm.cp.istfa1998p0139

View Articletitled, ESD Induced Failures in Cermet Trim Potentiometers

Basic Physics in Color-Coded EOS Metallization Failures (Differentiating between EOS and ESD)

Leo G. Henry; J.H. Mazur

ISTFA 1998; 143-150https://doi.org/10.31399/asm.cp.istfa1998p0143

View Articletitled, Basic Physics in Color-Coded EOS Metallization Failures (Differentiating between EOS and ESD)

ESD Induced Failure of an Internal MOSFET in a Mixed Signal IC due to Two Different Power Supplies

Fayik Bundhoo; Lakshmi Vedula; Shekhar Khandekar

ISTFA 1998; 151-154https://doi.org/10.31399/asm.cp.istfa1998p0151

View Articletitled, ESD Induced Failure of an Internal MOSFET in a Mixed Signal IC due to Two Different Power Supplies

Techniques

An Effective and Practical Analysis Technique for Open Defect Isolation at I_DD Leakage Failure by Observing Transient Photo Emission

A. Nishikawa; N.I. Kato; J. Matsuzawa; K. Takagi; N. Miura

ISTFA 1998; 157-162https://doi.org/10.31399/asm.cp.istfa1998p0157

View Articletitled, An Effective and Practical Analysis Technique for Open Defect Isolation at I<sub>DD</sub> Leakage Failure by Observing Transient Photo Emission

Thermally Assisted Photoemission for CMOS Device Analysis

K. Symonds; J. Wilson

ISTFA 1998; 163-168https://doi.org/10.31399/asm.cp.istfa1998p0163

View Articletitled, Thermally Assisted Photoemission for CMOS Device Analysis

Non-Contact Probing of Integrated Circuits Using Electrostatic Force Sampling

G.E. Bridges; D.J. Thomson; R. Qi

ISTFA 1998; 169-172https://doi.org/10.31399/asm.cp.istfa1998p0169

View Articletitled, Non-Contact Probing of Integrated Circuits Using Electrostatic Force Sampling

Evaluation of the Resistance of Individual Si Die to Cracking

R. Berriche; R.K. Lowry; M.I. Rosenfield

ISTFA 1998; 197-202https://doi.org/10.31399/asm.cp.istfa1998p0197

View Articletitled, Evaluation of the Resistance of Individual Si Die to Cracking

Aluminum Interconnect Response to Electrical Overstress

J.E. Vinson

ISTFA 1998; 203-211https://doi.org/10.31399/asm.cp.istfa1998p0203

View Articletitled, Aluminum Interconnect Response to Electrical Overstress

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

Tomasz Brozek; James Heddleson

ISTFA 1998; 213-217https://doi.org/10.31399/asm.cp.istfa1998p0213

View Articletitled, Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

Layout Overlay Techniques to Improve Failure Analysis

Christian Burmer; Siegfried Görlich; Siegfried Pauthner

ISTFA 1998; 365-372https://doi.org/10.31399/asm.cp.istfa1998p0365

View Articletitled, Layout Overlay Techniques to Improve Failure Analysis

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

Phil Schani; S. Subramanian; Vince Soorholtz; Pat Liston; Jamey Moss; Ed Widener; Amy Chu

ISTFA 1998; 373-376https://doi.org/10.31399/asm.cp.istfa1998p0373

View Articletitled, Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

Comparison of Failure for HBM ESD Testers Meeting ANSI/ESD S-5.1 or the New ESDA Standard Test Method and JEDEC Standard

Fred Khosropour; Colin Hatchard; Ian Morgan; Leo G. Henry

ISTFA 1998; 377-385https://doi.org/10.31399/asm.cp.istfa1998p0377

View Articletitled, Comparison of Failure for HBM ESD Testers Meeting ANSI/ESD S-5.1 or the New ESDA Standard Test Method and JEDEC Standard

A Method for Cross Sectioning Polyimide Passivated Semiconductors

Richard N. Gatto

ISTFA 1998; 387-389https://doi.org/10.31399/asm.cp.istfa1998p0387

View Articletitled, A Method for Cross Sectioning Polyimide Passivated Semiconductors

Selective Wet-Etch of Silicon Nitride Passivation Layers

P. Malberti; M. Ciappa

ISTFA 1998; 429-434https://doi.org/10.31399/asm.cp.istfa1998p0429

View Articletitled, Selective Wet-Etch of Silicon Nitride Passivation Layers

Infrared Scanning Using Radiance vs. Temperature Calibration Techniques to Determine Actual Temperature of an Electronic Component

David Dickey

ISTFA 1998; 435-437https://doi.org/10.31399/asm.cp.istfa1998p0435

View Articletitled, Infrared Scanning Using Radiance vs. Temperature Calibration Techniques to Determine Actual Temperature of an Electronic Component

Case Histories

A Hermetic Package Internal Water Vapor Paradox: Nonconforming Product That Does Not Fail

Robert K. Lowry

ISTFA 1998; 175-178https://doi.org/10.31399/asm.cp.istfa1998p0175

View Articletitled, A Hermetic Package Internal Water Vapor Paradox: Nonconforming Product That Does Not Fail

Graphical Representation of Permanent Defects in Hard Disk Drives

Josef Mohr; John Agness

ISTFA 1998; 179-183https://doi.org/10.31399/asm.cp.istfa1998p0179

View Articletitled, Graphical Representation of Permanent Defects in Hard Disk Drives

Evaluation of Pt/PZT/Pt Capacitors Using SIMS

Miki Tomotani; Hiroshi Ashida; Yasuyuki Goto; Seigen Otani

ISTFA 1998; 185-193https://doi.org/10.31399/asm.cp.istfa1998p0185

View Articletitled, Evaluation of Pt/PZT/Pt Capacitors Using SIMS

Passive Voltage Contrast Technique for Rapid In-Line Characterization and Failure Isolation During Development of Deep-Submicron ASIC CMOS Technology

Victor Liang; Harlan Sur; Subhas Bothra

ISTFA 1998; 221-225https://doi.org/10.31399/asm.cp.istfa1998p0221

View Articletitled, Passive Voltage Contrast Technique for Rapid In-Line Characterization and Failure Isolation During Development of Deep-Submicron ASIC CMOS Technology

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

D.S. Patrick; L.C. Wagner; P.T. Nguyen

ISTFA 1998; 235-244https://doi.org/10.31399/asm.cp.istfa1998p0235

View Articletitled, ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

A Study on Discolored Bondpads and Galvanic Corrosion

Hua Younan

ISTFA 1998; 269-272https://doi.org/10.31399/asm.cp.istfa1998p0269

View Articletitled, A Study on Discolored Bondpads and Galvanic Corrosion

Investigation of High Via Resistance of a 0.25μm CMOS ASIC Technology

H. Sur; S. Bothra; R. Lei; J. Hahn; H.J. Brugge

ISTFA 1998; 273-278https://doi.org/10.31399/asm.cp.istfa1998p0273

View Articletitled, Investigation of High Via Resistance of a 0.25μm CMOS ASIC Technology

Electromigration in Gold Line of GaAs IC

A. Ohta; K. Yajima; N. Higashisaka; T. Heima; T. Hisaka; N. Tanino

ISTFA 1998; 279-285https://doi.org/10.31399/asm.cp.istfa1998p0279

View Articletitled, Electromigration in Gold Line of GaAs IC

Testing

Realistic Database for Semiconductor Device Analysis

C.G. Kim; B.S. Sun; J.H. Koo; G.J. Jang; S.Y. Lee

ISTFA 1998; 247-252https://doi.org/10.31399/asm.cp.istfa1998p0247

View Articletitled, Realistic Database for Semiconductor Device Analysis

Auto-Fault-Locating-System for Mounting Boards

M. Nikaido; M. Yojima; M. Iida

ISTFA 1998; 253-258https://doi.org/10.31399/asm.cp.istfa1998p0253

View Articletitled, Auto-Fault-Locating-System for Mounting Boards

Faster Defect Localization with a New Development of I_DDQ

Romain Desplats; Philippe Perdu; Jamel Benbrik; Michel Dupire

ISTFA 1998; 259-266https://doi.org/10.31399/asm.cp.istfa1998p0259

View Articletitled, Faster Defect Localization with a New Development of I<sub>DDQ</sub>

Poster Session

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

H. Lorenz; C. Engel

ISTFA 1998; 289-295https://doi.org/10.31399/asm.cp.istfa1998p0289

View Articletitled, Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

Non-destructive Chemical Decapsulation Techniques for TBGA Package Devices

Lili Esfahani

ISTFA 1998; 297-301https://doi.org/10.31399/asm.cp.istfa1998p0297

View Articletitled, Non-destructive Chemical Decapsulation Techniques for TBGA Package Devices

Techniques to Remove the C4 Die from a Ceramic Package

Mehrdad Mahanpour; Andy Gray; Jose Hulog; Pat Chang

ISTFA 1998; 303-306https://doi.org/10.31399/asm.cp.istfa1998p0303

View Articletitled, Techniques to Remove the C4 Die from a Ceramic Package

Simple Flip Chip Analysis Strategies

Richard L. Tubbs

ISTFA 1998; 307-316https://doi.org/10.31399/asm.cp.istfa1998p0307

View Articletitled, Simple Flip Chip Analysis Strategies

The Logic Mapper

Shawn Smith

ISTFA 1998; 319-322https://doi.org/10.31399/asm.cp.istfa1998p0319

View Articletitled, The Logic Mapper

Making the Most of the Internet for Failure Analysis

Dan J. Bodoh

ISTFA 1998; 323-327https://doi.org/10.31399/asm.cp.istfa1998p0323

View Articletitled, Making the Most of the Internet for Failure Analysis

High-Yield and High-Throughput TEM Sample Preparation Using Focused Ion Beam Automation

R.J. Young; P.D. Carleson; X. Da; T. Hunt; J.F. Walker

ISTFA 1998; 329-336https://doi.org/10.31399/asm.cp.istfa1998p0329

View Articletitled, High-Yield and High-Throughput TEM Sample Preparation Using Focused Ion Beam Automation

Application of EMS Analysis to Failure in Cell Area of Memory Device

T. Nukumizu; J. Sato; H. Furuya; H. Namba; T. Kikuch

ISTFA 1998; 337-344https://doi.org/10.31399/asm.cp.istfa1998p0337

View Articletitled, Application of EMS Analysis to Failure in Cell Area of Memory Device

Discretes

Reduced Device Life Caused by Flux Entrapment During the Construction Process

James V. Pierce, III; Lawrence F. Shuniak

ISTFA 1998; 347-352https://doi.org/10.31399/asm.cp.istfa1998p0347

View Articletitled, Reduced Device Life Caused by Flux Entrapment During the Construction Process

Mechanical/Plasma Decapsulation Method and Thermal Finite-Element Analysis Provide Explanation for SMB Zener Failures

Kent Kime; Chuck Reed; Joe Di Silvestro; Ruth Ruiz; Simon Keeton; Gene P. Thome

ISTFA 1998; 353-357https://doi.org/10.31399/asm.cp.istfa1998p0353

View Articletitled, Mechanical/Plasma Decapsulation Method and Thermal Finite-Element Analysis Provide Explanation for SMB Zener Failures

Innovative Application of a Passive Device Failure Analysis Technique to a JFET

J.J. Erickson; M.J. Ditz

ISTFA 1998; 359-362https://doi.org/10.31399/asm.cp.istfa1998p0359

View Articletitled, Innovative Application of a Passive Device Failure Analysis Technique to a JFET

Packaging

ESD Protection Using Active Area Bonding

Joe C. Bernier; Larry Teems

ISTFA 1998; 393-398https://doi.org/10.31399/asm.cp.istfa1998p0393

View Articletitled, ESD Protection Using Active Area Bonding

Identifying Plastic Encapsulant Materials by Pyrolysis Infrared Spectrophotometry

Robert K. Lowry; Kristen L. Hanley

ISTFA 1998; 399-404https://doi.org/10.31399/asm.cp.istfa1998p0399

View Articletitled, Identifying Plastic Encapsulant Materials by Pyrolysis Infrared Spectrophotometry

The Effect of Ball Pad Metallurgy and Ball Composition on Solder Ball Integrity of Plastic Ball Grid Array Packages

C.H. Zhong; Sung Yi

ISTFA 1998; 405-411https://doi.org/10.31399/asm.cp.istfa1998p0405

View Articletitled, The Effect of Ball Pad Metallurgy and Ball Composition on Solder Ball Integrity of Plastic Ball Grid Array Packages

Application of Standard Metallurgical Analytical Techniques to Improve High Temperature Operational Life Performance of Bump Interconnect Technology of Flip Chip Packaging

Kendall Scott Wills; John Abbott; Chris Carty; Rohini Raghunathan; Philip Simon; Charles Todd; Andy Vance; Jianbai Zhu

ISTFA 1998; 413-425https://doi.org/10.31399/asm.cp.istfa1998p0413

View Articletitled, Application of Standard Metallurgical Analytical Techniques to Improve High Temperature Operational Life Performance of Bump Interconnect Technology of Flip Chip Packaging

Backside Analysis

A Study of Effects of Backside Thinning on Integrated Circuits Using a Precision Diamond Wheel Apparatus

S.P. Roberts; J.M. Patterson

ISTFA 1998; 441-445https://doi.org/10.31399/asm.cp.istfa1998p0441

View Articletitled, A Study of Effects of Backside Thinning on Integrated Circuits Using a Precision Diamond Wheel Apparatus

Backside Emission Microscopy for Integrated Circuits on Heavily Doped Substrate

Ching-Lang Chiang; Neeraj Khurana; Daniel T. Hurley; Ken Teasdale

ISTFA 1998; 447-453https://doi.org/10.31399/asm.cp.istfa1998p0447

View Articletitled, Backside Emission Microscopy for Integrated Circuits on Heavily Doped Substrate

FIB Micro-Surgery on Flip-Chips from the Backside

Raymond Lee; Nicholas Antoniou

ISTFA 1998; 455-459https://doi.org/10.31399/asm.cp.istfa1998p0455

View Articletitled, FIB Micro-Surgery on Flip-Chips from the Backside

OBIC Endpointing Method for Laser Thinning of Flip-Chip Circuits

Scott Silverman; Richard Aucoin; Daniel Ehrlich; Kenneth Nill

ISTFA 1998; 461-464https://doi.org/10.31399/asm.cp.istfa1998p0461

View Articletitled, OBIC Endpointing Method for Laser Thinning of Flip-Chip Circuits

A Novel Fault Isolation Technique Using Noise Detection and Characterization of Light Emitted From Integrated Circuits

Hong Zheng; Joe Patterson; G. P. Li

ISTFA 1998; 467-471https://doi.org/10.31399/asm.cp.istfa1998p0467

View Articletitled, A Novel Fault Isolation Technique Using Noise Detection and Characterization of Light Emitted From Integrated Circuits

Failure Analysis of Advanced Microprocessors through Backside Approaches

D. Davis; O. Diaz de Leon; L. Hughes; S. V. Pabbisetty; R. Parker; P. Scott; C. Todd; J. Widaski; G. Wilhite; K.S. Wills; J. Zhu

ISTFA 1998; 472-482https://doi.org/10.31399/asm.cp.istfa1998p0472

View Articletitled, Failure Analysis of Advanced Microprocessors through Backside Approaches

Non-Invasive Backside Failure Analysis of Integrated Circuits by Time-Dependent Light Emission: Picosecond Imaging Circuit Analysis

J.A. Kash; J.C. Tsang; D.R. Knebel; D.P. Vallett

ISTFA 1998; 483-488https://doi.org/10.31399/asm.cp.istfa1998p0483

View Articletitled, Non-Invasive Backside Failure Analysis of Integrated Circuits by Time-Dependent Light Emission: Picosecond Imaging Circuit Analysis

Volume Information

Credits

ISTFA 1998; iv-viiihttps://doi.org/10.31399/asm.cp.istfa1998fm01

View Articletitled, Credits

Preface

ISTFA 1998; xiiihttps://doi.org/10.31399/asm.cp.istfa1998fm02

View Articletitled, Preface

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