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Proceedings Papers

Proceedings Volume Cover
ISTFA 1997
October 27–31, 1997
Santa Clara, California, USA
Conference Sponsors:
  • Electronic Device Failure Analysis Society
  • ASM International
ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis
ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis

Keynote Presentation

Testing-Based Failure Analysis: A Critical Component of the SIA Roadmap Vision
W. Maly
ISTFA 1997; 3-6https://doi.org/10.31399/asm.cp.istfa1997p0003
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Testing and Signature Analysis

Experimental Figures for the Defect Coverage of IDDQ Vectors
I. Clemminck; U. Swerts; M. Darquennes; J. van Sas; S. Vanhaeverbeke
ISTFA 1997; 9-13https://doi.org/10.31399/asm.cp.istfa1997p0009
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A CAD-Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal IDDQ
M. Sanada
ISTFA 1997; 15-24https://doi.org/10.31399/asm.cp.istfa1997p0015
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Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non-Volatile Memory
D. Boyne; J. Goertz; D. Parsons
ISTFA 1997; 25-30https://doi.org/10.31399/asm.cp.istfa1997p0025
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Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism
H. Sur; A. Cohen; E. de Muizon
ISTFA 1997; 31-37https://doi.org/10.31399/asm.cp.istfa1997p0031
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Techniques

Scanning Fluorescent Microthermal Imaging
D. L. Barton; P. Tangyunyong
ISTFA 1997; 41-49https://doi.org/10.31399/asm.cp.istfa1997p0041
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Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM)
G. M. Fiege; R. M. Cramer; L. Balk; F. Reineke
ISTFA 1997; 51-56https://doi.org/10.31399/asm.cp.istfa1997p0051
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Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods
S. Ferrier
ISTFA 1997; 57-62https://doi.org/10.31399/asm.cp.istfa1997p0057
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Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices
S.-S. Lee; J.-S. Seo; N.-S. Cho; S. Daniel
ISTFA 1997; 63-66https://doi.org/10.31399/asm.cp.istfa1997p0063
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Investigation of Multi-Level Metallization ULSls by Light Emission from the Back-Side and Front-Side of the Chip
K. Naitoh; T. Ishii; J.-I. Mitsuhashi
ISTFA 1997; 145-151https://doi.org/10.31399/asm.cp.istfa1997p0145
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A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy
M. Rasras; I. De Wolf; G. Groeseneken; H. E. Maes; S. Vanhaeverbeke; P. De Pauw
ISTFA 1997; 153-157https://doi.org/10.31399/asm.cp.istfa1997p0153
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Novel Failure Analysis Technique “Light Induced State Transition (LIST)” Method Using an OBIC System
A. Nishikawa; C. Odani; N. Miura; Y. Kohno; M. Shimizu
ISTFA 1997; 159-163https://doi.org/10.31399/asm.cp.istfa1997p0159
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An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices
E. H. Yeoh; W. M. Mak; H. C. Lock; S. K. Sim; C. C. Ooi; B. Baker; D. Core; K. Maxwell
ISTFA 1997; 165-168https://doi.org/10.31399/asm.cp.istfa1997p0165
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Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests
G. Meneghesso; E. Zanoni; P. Colombo; M. Brambilla; R. Annunziata; P. Pavan
ISTFA 1997; 315-320https://doi.org/10.31399/asm.cp.istfa1997p0315
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BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section
J. Douglass; T. D. Myers; F. Tsai; R. Ketcheson; J. Errett
ISTFA 1997; 321-328https://doi.org/10.31399/asm.cp.istfa1997p0321
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SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications
J. Cowan; T. Taylor
ISTFA 1997; 329-337https://doi.org/10.31399/asm.cp.istfa1997p0329
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Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis
D. Luo; X. Song
ISTFA 1997; 339-343https://doi.org/10.31399/asm.cp.istfa1997p0339
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Poster Session

A New Chemical Method of Wright Etch in the Delineation of Stacking Faults and Crystalline Defects in Fabrication Silicon Wafer Substrate
Y. Hua; S.Y. Fong
ISTFA 1997; 69-78https://doi.org/10.31399/asm.cp.istfa1997p0069
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Cross Sectioning with a Pivoting Sample Block
J. Bernier; R. Wurzbacher
ISTFA 1997; 79-83https://doi.org/10.31399/asm.cp.istfa1997p0079
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Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment
P. Malberti; M. Ciappa
ISTFA 1997; 85-87https://doi.org/10.31399/asm.cp.istfa1997p0085
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The Identification of Thermal Fatigue Testing Method of Soldered Joints for Space Use
M. Yonemaru; A. Shimizu; S. Matsuda; I. Seo
ISTFA 1997; 91-96https://doi.org/10.31399/asm.cp.istfa1997p0091
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Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis
C. A. Hunt
ISTFA 1997; 97-101https://doi.org/10.31399/asm.cp.istfa1997p0097
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Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of Current
M. J. Ditz
ISTFA 1997; 103-111https://doi.org/10.31399/asm.cp.istfa1997p0103
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The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC
X. Yang; X. Song
ISTFA 1997; 115-119https://doi.org/10.31399/asm.cp.istfa1997p0115
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The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair
R. Lee; M. Cecere
ISTFA 1997; 121-123https://doi.org/10.31399/asm.cp.istfa1997p0121
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Micro-Electrical-Mechanical Systems (MEMS)

Failure Analysis Challenges of Surface Micromachined Accelerometers
M. P. Saltmarsh
ISTFA 1997; 127-131https://doi.org/10.31399/asm.cp.istfa1997p0127
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Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS)
K. A. Peterson; P. Tangyunyong; D. L. Barton
ISTFA 1997; 133-142https://doi.org/10.31399/asm.cp.istfa1997p0133
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Discretes

Characterization of Californium – 252 (252Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices
J. Plante; E. Allen; G. Lum
ISTFA 1997; 171-177https://doi.org/10.31399/asm.cp.istfa1997p0171
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Dendritic Growth Failure of a Mesa Diode
P. Singh; V. Cozzolino; G. Galyon; R. Logan; K. Troccia; J. L. Hurd; P. Tsai
ISTFA 1997; 179-184https://doi.org/10.31399/asm.cp.istfa1997p0179
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Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors
M. L. Morris; B. Cook; J. DiSilvestro
ISTFA 1997; 185-188https://doi.org/10.31399/asm.cp.istfa1997p0185
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Interpretation of Sudden Failures in Pump Laser Diodes
A. Bonfiglió; M. Vanzi; M. B. Casu; F. Magistrali; M. Maini; G. Salmini
ISTFA 1997; 189-194https://doi.org/10.31399/asm.cp.istfa1997p0189
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Packaging/E-Beam

Through-Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages
T. M. Moore; C. D. Hartfield
ISTFA 1997; 197-204https://doi.org/10.31399/asm.cp.istfa1997p0197
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Moisture Detection Method in Ceramic Package by Slight Current Measurement
A. Hirai; T. Kikuchi; H. Namba; J. Sato
ISTFA 1997; 205-209https://doi.org/10.31399/asm.cp.istfa1997p0205
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Laser Microchemical Technology: New Tools for Flip-Chip Debug and Failure Analysis
S. Silverman; R. Aucoin; J. Mallatt; D. Ehrlich
ISTFA 1997; 211-213https://doi.org/10.31399/asm.cp.istfa1997p0211
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Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits
J. C. H. Phang; S. Kolachina; D. S. H. Chan
ISTFA 1997; 215-219https://doi.org/10.31399/asm.cp.istfa1997p0215
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FIB/E-Beam

Electrical and Chemical Characterization of FIB-Deposited Insulators
A. N. Campbell; D. M. Tanner; J. M. Soden; D. K. Stewart; A. Doyle; E. Adams; M. Gibson; M. Abramo
ISTFA 1997; 223-230https://doi.org/10.31399/asm.cp.istfa1997p0223
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IC Design Modification Using Laser Assisted Organometal Deposition
D. Bethke
ISTFA 1997; 231-235https://doi.org/10.31399/asm.cp.istfa1997p0231
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Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)
K. Doong; J.-M. Fu; Y.-C. Huang
ISTFA 1997; 237-242https://doi.org/10.31399/asm.cp.istfa1997p0237
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Automatic Fault Tracing Using an E-Beam Tester with Reference to a Good Sample
S.-I. Wada; T. Nakamura
ISTFA 1997; 243-252https://doi.org/10.31399/asm.cp.istfa1997p0243
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Case Histories

The Business Aspects of Failure Analysis
R. Frank; T. Lee
ISTFA 1997; 255-266https://doi.org/10.31399/asm.cp.istfa1997p0255
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A Process Induced Failure Mechanism in the EEPROM Cell - Its Identification and Solution
Y. L. Tsang; C. Cavins
ISTFA 1997; 267-272https://doi.org/10.31399/asm.cp.istfa1997p0267
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Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy
R. John
ISTFA 1997; 273-277https://doi.org/10.31399/asm.cp.istfa1997p0273
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Detection of Gate Oxide Defects Using Electrochemical Wet Etching in KOH:H2O Solution
N. Ohtani; T. Katayama; H. Yamamoto; H. Koyama
ISTFA 1997; 279-283https://doi.org/10.31399/asm.cp.istfa1997p0279
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Spin-On-Glass (SOG) Contamination Causing Single Via Failure
P. Isakanian; S. Hunjan
ISTFA 1997; 287-291https://doi.org/10.31399/asm.cp.istfa1997p0287
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Use of Failure Analysis Techniques to Optimize the Passivation Process for a TLM 0.35 µm Process
S. Bothra; H. Sur; H. Brugge; D. Pramanik
ISTFA 1997; 293-298https://doi.org/10.31399/asm.cp.istfa1997p0293
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Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices
K. H. Parekh; R. Milburn
ISTFA 1997; 299-303https://doi.org/10.31399/asm.cp.istfa1997p0299
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Elimination of Whisker Growth on Tin Plated Electrodes
M. Endo; S. Higuchi; Y. Tokuda; Y. Sakabe
ISTFA 1997; 305-311https://doi.org/10.31399/asm.cp.istfa1997p0305
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Volume Information

Credits
ISTFA 1997; iv-viiihttps://doi.org/10.31399/asm.cp.istfa1997fm01
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Preface
ISTFA 1997; xiiihttps://doi.org/10.31399/asm.cp.istfa1997fm02
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