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ISTFA 1997

October 27–31, 1997

Santa Clara, California, USA

Conference Sponsors:

Electronic Device Failure Analysis Society
ASM International

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis

Issue navigation

Keynote Presentation
Testing and Signature Analysis
Techniques
Poster Session
Micro-Electrical-Mechanical Systems (MEMS)
Techniques
Discretes
Packaging/E-Beam
FIB/E-Beam
Case Histories
Techniques
Volume Information

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis

Keynote Presentation

Testing-Based Failure Analysis: A Critical Component of the SIA Roadmap Vision

W. Maly

ISTFA 1997; 3-6doi:https://doi.org/10.31399/asm.cp.istfa1997p0003

Testing and Signature Analysis

Experimental Figures for the Defect Coverage of I_DDQ Vectors

I. Clemminck; U. Swerts; M. Darquennes; J. van Sas; S. Vanhaeverbeke

ISTFA 1997; 9-13doi:https://doi.org/10.31399/asm.cp.istfa1997p0009

A CAD-Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal I_DDQ

M. Sanada

ISTFA 1997; 15-24doi:https://doi.org/10.31399/asm.cp.istfa1997p0015

Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non-Volatile Memory

D. Boyne; J. Goertz; D. Parsons

ISTFA 1997; 25-30doi:https://doi.org/10.31399/asm.cp.istfa1997p0025

Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism

H. Sur; A. Cohen; E. de Muizon

ISTFA 1997; 31-37doi:https://doi.org/10.31399/asm.cp.istfa1997p0031

Techniques

Scanning Fluorescent Microthermal Imaging

D. L. Barton; P. Tangyunyong

ISTFA 1997; 41-49doi:https://doi.org/10.31399/asm.cp.istfa1997p0041

Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM)

G. M. Fiege; R. M. Cramer; L. Balk; F. Reineke

ISTFA 1997; 51-56doi:https://doi.org/10.31399/asm.cp.istfa1997p0051

Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods

S. Ferrier

ISTFA 1997; 57-62doi:https://doi.org/10.31399/asm.cp.istfa1997p0057

Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices

S.-S. Lee; J.-S. Seo; N.-S. Cho; S. Daniel

ISTFA 1997; 63-66doi:https://doi.org/10.31399/asm.cp.istfa1997p0063

Investigation of Multi-Level Metallization ULSls by Light Emission from the Back-Side and Front-Side of the Chip

K. Naitoh; T. Ishii; J.-I. Mitsuhashi

ISTFA 1997; 145-151doi:https://doi.org/10.31399/asm.cp.istfa1997p0145

A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy

M. Rasras; I. De Wolf; G. Groeseneken; H. E. Maes; S. Vanhaeverbeke; P. De Pauw

ISTFA 1997; 153-157doi:https://doi.org/10.31399/asm.cp.istfa1997p0153

Novel Failure Analysis Technique “Light Induced State Transition (LIST)” Method Using an OBIC System

A. Nishikawa; C. Odani; N. Miura; Y. Kohno; M. Shimizu

ISTFA 1997; 159-163doi:https://doi.org/10.31399/asm.cp.istfa1997p0159

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

E. H. Yeoh; W. M. Mak; H. C. Lock; S. K. Sim; C. C. Ooi; B. Baker; D. Core; K. Maxwell

ISTFA 1997; 165-168doi:https://doi.org/10.31399/asm.cp.istfa1997p0165

Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

G. Meneghesso; E. Zanoni; P. Colombo; M. Brambilla; R. Annunziata; P. Pavan

ISTFA 1997; 315-320doi:https://doi.org/10.31399/asm.cp.istfa1997p0315

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

J. Douglass; T. D. Myers; F. Tsai; R. Ketcheson; J. Errett

ISTFA 1997; 321-328doi:https://doi.org/10.31399/asm.cp.istfa1997p0321

SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications

J. Cowan; T. Taylor

ISTFA 1997; 329-337doi:https://doi.org/10.31399/asm.cp.istfa1997p0329

Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis

D. Luo; X. Song

ISTFA 1997; 339-343doi:https://doi.org/10.31399/asm.cp.istfa1997p0339

Poster Session

A New Chemical Method of Wright Etch in the Delineation of Stacking Faults and Crystalline Defects in Fabrication Silicon Wafer Substrate

Y. Hua; S.Y. Fong

ISTFA 1997; 69-78doi:https://doi.org/10.31399/asm.cp.istfa1997p0069

Cross Sectioning with a Pivoting Sample Block

J. Bernier; R. Wurzbacher

ISTFA 1997; 79-83doi:https://doi.org/10.31399/asm.cp.istfa1997p0079

Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment

P. Malberti; M. Ciappa

ISTFA 1997; 85-87doi:https://doi.org/10.31399/asm.cp.istfa1997p0085

The Identification of Thermal Fatigue Testing Method of Soldered Joints for Space Use

M. Yonemaru; A. Shimizu; S. Matsuda; I. Seo

ISTFA 1997; 91-96doi:https://doi.org/10.31399/asm.cp.istfa1997p0091

Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis

C. A. Hunt

ISTFA 1997; 97-101doi:https://doi.org/10.31399/asm.cp.istfa1997p0097

Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of Current

M. J. Ditz

ISTFA 1997; 103-111doi:https://doi.org/10.31399/asm.cp.istfa1997p0103

The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC

X. Yang; X. Song

ISTFA 1997; 115-119doi:https://doi.org/10.31399/asm.cp.istfa1997p0115

The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair

R. Lee; M. Cecere

ISTFA 1997; 121-123doi:https://doi.org/10.31399/asm.cp.istfa1997p0121

Micro-Electrical-Mechanical Systems (MEMS)

Failure Analysis Challenges of Surface Micromachined Accelerometers

M. P. Saltmarsh

ISTFA 1997; 127-131doi:https://doi.org/10.31399/asm.cp.istfa1997p0127

Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS)

K. A. Peterson; P. Tangyunyong; D. L. Barton

ISTFA 1997; 133-142doi:https://doi.org/10.31399/asm.cp.istfa1997p0133

Discretes

Characterization of Californium – 252 (²⁵²Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices

J. Plante; E. Allen; G. Lum

ISTFA 1997; 171-177doi:https://doi.org/10.31399/asm.cp.istfa1997p0171

Dendritic Growth Failure of a Mesa Diode

P. Singh; V. Cozzolino; G. Galyon; R. Logan; K. Troccia; J. L. Hurd; P. Tsai

ISTFA 1997; 179-184doi:https://doi.org/10.31399/asm.cp.istfa1997p0179

Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors

M. L. Morris; B. Cook; J. DiSilvestro

ISTFA 1997; 185-188doi:https://doi.org/10.31399/asm.cp.istfa1997p0185

Interpretation of Sudden Failures in Pump Laser Diodes

A. Bonfiglió; M. Vanzi; M. B. Casu; F. Magistrali; M. Maini; G. Salmini

ISTFA 1997; 189-194doi:https://doi.org/10.31399/asm.cp.istfa1997p0189

Packaging/E-Beam

Through-Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages

T. M. Moore; C. D. Hartfield

ISTFA 1997; 197-204doi:https://doi.org/10.31399/asm.cp.istfa1997p0197

Moisture Detection Method in Ceramic Package by Slight Current Measurement

A. Hirai; T. Kikuchi; H. Namba; J. Sato

ISTFA 1997; 205-209doi:https://doi.org/10.31399/asm.cp.istfa1997p0205

Laser Microchemical Technology: New Tools for Flip-Chip Debug and Failure Analysis

S. Silverman; R. Aucoin; J. Mallatt; D. Ehrlich

ISTFA 1997; 211-213doi:https://doi.org/10.31399/asm.cp.istfa1997p0211

Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits

J. C. H. Phang; S. Kolachina; D. S. H. Chan

ISTFA 1997; 215-219doi:https://doi.org/10.31399/asm.cp.istfa1997p0215

FIB/E-Beam

Electrical and Chemical Characterization of FIB-Deposited Insulators

A. N. Campbell; D. M. Tanner; J. M. Soden; D. K. Stewart; A. Doyle; E. Adams; M. Gibson; M. Abramo

ISTFA 1997; 223-230doi:https://doi.org/10.31399/asm.cp.istfa1997p0223

IC Design Modification Using Laser Assisted Organometal Deposition

D. Bethke

ISTFA 1997; 231-235doi:https://doi.org/10.31399/asm.cp.istfa1997p0231

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSi_x)

K. Doong; J.-M. Fu; Y.-C. Huang

ISTFA 1997; 237-242doi:https://doi.org/10.31399/asm.cp.istfa1997p0237

Automatic Fault Tracing Using an E-Beam Tester with Reference to a Good Sample

S.-I. Wada; T. Nakamura

ISTFA 1997; 243-252doi:https://doi.org/10.31399/asm.cp.istfa1997p0243

Case Histories

The Business Aspects of Failure Analysis

R. Frank; T. Lee

ISTFA 1997; 255-266doi:https://doi.org/10.31399/asm.cp.istfa1997p0255

A Process Induced Failure Mechanism in the EEPROM Cell - Its Identification and Solution

Y. L. Tsang; C. Cavins

ISTFA 1997; 267-272doi:https://doi.org/10.31399/asm.cp.istfa1997p0267

Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy

R. John

ISTFA 1997; 273-277doi:https://doi.org/10.31399/asm.cp.istfa1997p0273

Detection of Gate Oxide Defects Using Electrochemical Wet Etching in KOH:H₂O Solution

N. Ohtani; T. Katayama; H. Yamamoto; H. Koyama

ISTFA 1997; 279-283doi:https://doi.org/10.31399/asm.cp.istfa1997p0279

Spin-On-Glass (SOG) Contamination Causing Single Via Failure

P. Isakanian; S. Hunjan

ISTFA 1997; 287-291doi:https://doi.org/10.31399/asm.cp.istfa1997p0287

Use of Failure Analysis Techniques to Optimize the Passivation Process for a TLM 0.35 µm Process

S. Bothra; H. Sur; H. Brugge; D. Pramanik

ISTFA 1997; 293-298doi:https://doi.org/10.31399/asm.cp.istfa1997p0293

Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices

K. H. Parekh; R. Milburn

ISTFA 1997; 299-303doi:https://doi.org/10.31399/asm.cp.istfa1997p0299

Elimination of Whisker Growth on Tin Plated Electrodes

M. Endo; S. Higuchi; Y. Tokuda; Y. Sakabe

ISTFA 1997; 305-311doi:https://doi.org/10.31399/asm.cp.istfa1997p0305

Volume Information

Credits

ISTFA 1997; iv-viiidoi:https://doi.org/10.31399/asm.cp.istfa1997fm01

Preface

ISTFA 1997; xiiidoi:https://doi.org/10.31399/asm.cp.istfa1997fm02

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